公开(公告)号：US06982495B2

公开(公告)日：2006-01-03

申请号：US10284778

申请日：2002-10-31

申请人： Hans-Georg Fröhlich ,  Johannes Kowalewski ,  Udo Götschkes ,  Frank Hübinger ,  Gerd Krause ,  Heike Langnickel ,  Antje Lässig ,  Reiner Trinowitz

发明人： Hans-Georg Fröhlich ,  Johannes Kowalewski ,  Udo Götschkes ,  Frank Hübinger ,  Gerd Krause ,  Heike Langnickel ,  Antje Lässig ,  Reiner Trinowitz

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A mark configuration for the alignment and/or determination of a relative position of at least two planes in relation to one another in a substrate and/or in layers on a substrate during lithographic exposure, in particular, in the case of a wafer during the production of DRAMs, includes a mark structure, and at least one layer of a definable thickness underneath the mark structure for adjusting the physical position of the mark structure relative to a reference plane in or on the substrate. Also provided is a wafer having such a configuration and a process for providing such a configuration. The invention allows a mark configuration to have mark structures exhibiting good contrast regardless of the design or the process conditions.