公开(公告)号：US06982495B2

公开(公告)日：2006-01-03

申请号：US10284778

申请日：2002-10-31

申请人： Hans-Georg Fröhlich ,  Johannes Kowalewski ,  Udo Götschkes ,  Frank Hübinger ,  Gerd Krause ,  Heike Langnickel ,  Antje Lässig ,  Reiner Trinowitz

发明人： Hans-Georg Fröhlich ,  Johannes Kowalewski ,  Udo Götschkes ,  Frank Hübinger ,  Gerd Krause ,  Heike Langnickel ,  Antje Lässig ,  Reiner Trinowitz

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A mark configuration for the alignment and/or determination of a relative position of at least two planes in relation to one another in a substrate and/or in layers on a substrate during lithographic exposure, in particular, in the case of a wafer during the production of DRAMs, includes a mark structure, and at least one layer of a definable thickness underneath the mark structure for adjusting the physical position of the mark structure relative to a reference plane in or on the substrate. Also provided is a wafer having such a configuration and a process for providing such a configuration. The invention allows a mark configuration to have mark structures exhibiting good contrast regardless of the design or the process conditions.

公开(公告)号：US20050106476A1

公开(公告)日：2005-05-19

申请号：US10965693

申请日：2004-10-14

申请人： Jens Hassmann ,  Johannes Kowalewski ,  Gerhard Kunkel ,  Thorsten Schedel ,  Uwe Schroder ,  Ina Voigt

发明人： Jens Hassmann ,  Johannes Kowalewski ,  Gerhard Kunkel ,  Thorsten Schedel ,  Uwe Schroder ,  Ina Voigt

IPC分类号： G03F7/20 ,  G03F9/00 ,  G03B27/54 ,  G03C5/00 ,  G03F1/08

CPC分类号： G03F7/70433

摘要： An item of information about the respective positions (501, 502, 601, 602) of at least two structure elements (50, 60) on a mask is provided. The displacement of the positional positions during the imaging by the lens system of the exposure apparatus, the displacement being governed by lens aberration, is measured and correction values (540, 640) are determined for each of the structure elements. Using the correction values (540, 640) the positions (501, 502, 601, 602) are changed in order to form new positions (505, 506, 605, 606) of the structure elements (50, 60) in such a way that the aberration effects can be compensated for. A mask (40) adapted to the exposure apparatus is exposed with the structures at the changed positions. The variation in the positional accuracies and the structure width distributions which is governed by the aberration of lenses is advantageously reduced.

摘要翻译： 提供关于掩模上的至少两个结构元件（50,60）的相应位置（501,502,601,602）的信息的项目。 测量由曝光装置的透镜系统进行的成像期间的位置位置的位移，由透镜像差控制的位移，并为每个结构元件确定校正值（540,640）。 使用校正值（540,640），改变位置（501,502,601,602），以便以这种方式形成结构元件（50,60）的新位置（505,506,605,606） 可以补偿像差效应。 适用于曝光装置的掩模（40）以改变的位置的结构曝光。 有利地减少了由透镜的像差所决定的位置精度和结构宽度分布的变化。

公开(公告)号：US07094674B2

公开(公告)日：2006-08-22

申请号：US10739477

申请日：2003-12-18

申请人： Werner Graf ,  Henning Haffner ,  Johannes Kowalewski ,  Lars Heineck

发明人： Werner Graf ,  Henning Haffner ,  Johannes Kowalewski ,  Lars Heineck

IPC分类号： H01L21/44

CPC分类号： H01L27/10888 ,  H01L21/76897

摘要： The invention relates to a method for production of contacts on a wafer, preferably with the aid of a lithographic process. The preferred embodiment provides a method which overcomes the disadvantages of the complex point/hole lithography process, and which avoids any increase in the process complexity. This method is achieved in that a strip structure extending over two layers is used to structure the contacts. The strip structure in the first layer is rotated at a predetermined angle with respect to the strip structure in the second layer, and the contacts are formed in the mutually overlapping areas of the strip structures in the two layers.

公开(公告)号：US20060276019A1

公开(公告)日：2006-12-07

申请号：US11503557

申请日：2006-08-11

申请人： Werner Graf ,  Henning Haffner ,  Johannes Kowalewski ,  Lars Heineck

发明人： Werner Graf ,  Henning Haffner ,  Johannes Kowalewski ,  Lars Heineck

IPC分类号： H01L21/3205 ,  H01L21/44

CPC分类号： H01L27/10888 ,  H01L21/76897

摘要： The invention relates to a method for production of contacts on a wafer, preferably with the aid of a lithographic process. The preferred embodiment provides a method which overcomes the disadvantages of the complex point/hole lithography process, and which avoids any increase in the process complexity. This method is achieved in that a strip structure extending over two layers is used to structure the contacts. The strip structure in the first layer is rotated at a predetermined angle with respect to the strip structure in the second layer, and the contacts are formed in the mutually overlapping areas of the strip structures in the two layers.

摘要翻译： 本发明涉及一种用于在晶片上生产触点的方法，优选借助于光刻工艺。 优选实施例提供一种克服复杂点/孔光刻工艺的缺点的方法，并且避免了工艺复杂性的任何增加。 该方法的实现是使用两层延伸的条状结构来构造触点。 第一层中的带状结构相对于第二层中的带状结构以预定角度旋转，并且触点形成在两层中条带结构的相互重叠的区域中。