Redundant column or row in resistive random access memory

    公开(公告)号:US09953728B2

    公开(公告)日:2018-04-24

    申请号:US15216589

    申请日:2016-07-21

    CPC classification number: G11C29/789 G11C13/0021 H01L45/04 H01L45/16

    Abstract: Examples include a resistive random access memory (RRAM) array to support a redundant column. Some examples include an RRAM cell at a cross point of a column line and a row line of the RRAM array. A first column line may be coupled to a first input of a first current-steering multiplexer and the first current-steering multiplexer may have an output coupled to a first current sense amplifier and a select input coupled to a first column select signal. A second column line may be coupled to a second input of the first current-steering multiplexer and coupled to a first input of a second current-steering multiplexer. The second current-steering multiplexer may have an output coupled to a second current sense amplifier and a select input coupled to a second column select signal. A third column line may be coupled to a second input of the second current-steering multiplexer.

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