公开(公告)号：US20250022840A1

公开(公告)日：2025-01-16

申请号：US18890986

申请日：2024-09-20

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Lasse Petteri PALM ,  Andreas Munding

IPC: H01L23/00 ,  H01L25/07 ,  H05K1/18 ,  H05K3/46

Abstract: A semiconductor power entity including a first laminate layer; a second laminate layer; an isolation layer arranged between the first laminate layer and the second laminate layer; a first metal layer arranged at a first laminate upper main face of the first laminate layer and a second metal layer arranged at a first laminate lower main face of the first laminate layer; a third metal layer arranged at a second laminate upper main face of the second laminate layer and a fourth metal layer arranged at a second laminate lower main face of the second laminate layer; and a connection metal layer embedded in the isolation layer between the first laminate layer and the second laminate layer, the connection metal layer forming an electrical connection with the second metal layer and the third metal layer.

公开(公告)号：US20250079332A1

公开(公告)日：2025-03-06

申请号：US18952995

申请日：2024-11-19

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Andreas Munding ,  Lasse Petteri Palm ,  Gilberto Curatola

IPC: H01L23/552 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H02M7/00

Abstract: The disclosure relates to a power converter package (100) for converting a first DC voltage and a second DC voltage into a common AC voltage. The power converter package comprises: a first power semiconductor (130) and a second power semiconductor (140); a first substrate (110); and a second substrate (120). The first substrate (110) comprises a first supply voltage area (113) being formed to supply the first DC voltage and a second supply voltage area (114) being formed to supply the second DC voltage. The first substrate (110) comprises a base metal area (115) being arranged on a first substrate lower main face (112). The base metal area (115) is configured to extract dissipated heat from the first power semiconductor (130) and the second power semiconductor (140). The second substrate (120) comprises an AC voltage output area (150) formed to provide the AC voltage.