公开(公告)号：US3020411A

公开(公告)日：1962-02-06

申请号：US74668258

申请日：1958-07-07

Applicant: IBM

Inventor： GEORGE CHEROFF

IPC: H03K17/78

CPC classification number: H03K17/78

公开(公告)号：US3345223A

公开(公告)日：1967-10-03

申请号：US49081465

申请日：1965-09-28

Applicant: IBM

Inventor： ARNOLD REISMAN ,  MELVIN BERKENBILT ,  PAPAZIAN SATENIK A ,  GEORGE CHEROFF

IPC: C30B25/02

CPC classification number: C30B25/02 ,  C30B29/08

公开(公告)号：US2986644A

公开(公告)日：1961-05-30

申请号：US78392458

申请日：1958-12-30

Applicant: IBM

Inventor： GEORGE CHEROFF

IPC: G02B27/28 ,  H01L21/00 ,  H01L31/00 ,  H01L31/06

CPC classification number: H01L31/00 ,  G02B27/28 ,  H01L21/00 ,  H01L31/06 ,  Y02E10/50

公开(公告)号：US3345209A

公开(公告)日：1967-10-03

申请号：US35685064

申请日：1964-04-02

Applicant: IBM

Inventor： GEORGE CHEROFF ,  ARNOLD REISMAN

IPC: C30B25/02

CPC classification number: C30B25/02 ,  C30B29/08

Abstract: Germanium is successively epitaxially deposited on and etched from a substrate 11 of Ge, GaAs, GaP or InSb by reacting HI in a H2 and He gas stream with a heated Ge bed 9 and passing this stream over the substrate at a lower temperature than the bed 9. Pulsed UV light from a Xenon source 12 irradiates the substrate Ge being deposited when the light is off and removed when the light is on, the pulse frequency may vary during the process. HI is formed by passing a mixed controlled flow of H2 and He through a heated iodine crystal bed 4 and then through a platinum wool catalyst chamber 8. In one example a single crystal substrate is continuously irradiated and the surface etched by the gas stream.ALSO: In a method of depositing Ge (see Division C7) HI is formed by passing a mixed controlled flow of H2 and He through an iodine crystal bed 4 in a thermostatically controlled oil bath at 50 DEG C. and then through a platinum wool catalyst chamber 8 at 300-400 DEG C. Sufficient hydrogen is provided to ensure complete conversion of iodine from the bed 4.

公开(公告)号：US3145120A

公开(公告)日：1964-08-18

申请号：US17269962

申请日：1962-02-12

Applicant: IBM

Inventor： GEORGE CHEROFF ,  FREDERICK HOCHBERG ,  ARNOLD REISMAN ,  SOL TRIEBWASSER

IPC: B22F3/10 ,  C04B35/547 ,  C04B35/64 ,  H01L21/00

CPC classification number: C04B35/64 ,  B22F3/1003 ,  C04B35/547 ,  H01L21/00 ,  Y10S118/90

公开(公告)号：US3333985A

公开(公告)日：1967-08-01

申请号：US33064963

申请日：1963-12-16

Applicant: IBM

Inventor： MELVIN BERKENBLIT ,  GEORGE CHEROFF ,  FREDERICK HOCHBERG ,  ARNOLD REISMAN

IPC: H01L31/18

CPC classification number: H01L31/18

公开(公告)号：US3222216A

公开(公告)日：1965-12-07

申请号：US19979962

申请日：1962-06-04

Applicant: IBM

Inventor： MELVIN BERKENBLIT ,  GEORGE CHEROFF ,  FREDERICK HOCHBERG ,  ARNOLD REISMAN

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0224 ,  H01L31/18

公开(公告)号：US3202609A

公开(公告)日：1965-08-24

申请号：US17001562

申请日：1962-01-31

Applicant: IBM

Inventor： ARNOLD REISMAN ,  MELVIN BERKENBLIT ,  GEORGE CHEROFF ,  FREDERICK HOCHBERG

IPC: C22C1/04

CPC classification number: C22C1/04

公开(公告)号：US3175091A

公开(公告)日：1965-03-23

申请号：US20693062

申请日：1962-07-02

Applicant: IBM

Inventor： GEORGE CHEROFF ,  FREDERICK HOCHBERG ,  ARNOLD REISMAN

IPC: G03G5/082

CPC classification number: G03G5/082