公开(公告)号：US3345223A

公开(公告)日：1967-10-03

申请号：US49081465

申请日：1965-09-28

Applicant: IBM

Inventor： ARNOLD REISMAN ,  MELVIN BERKENBILT ,  PAPAZIAN SATENIK A ,  GEORGE CHEROFF

IPC: C30B25/02

CPC classification number: C30B25/02 ,  C30B29/08

公开(公告)号：US3354004A

公开(公告)日：1967-11-21

申请号：US41188164

申请日：1964-11-17

Applicant: IBM

Inventor： ARNOLD REISMAN ,  MELVIN BERKENBLIT ,  ALYANAKYAN SATENIK A

IPC: C22B41/00 ,  C23C16/14 ,  C30B25/02

CPC classification number: C23C16/14 ,  C22B41/00 ,  C30B25/02 ,  C30B29/08 ,  Y10S118/90

Abstract: Semi-conductor material, particularly Ge, is epitaxially deposited on a substrate by reacting the material with a hydrogen-inert gas-halide mixture to produce compounds thereof in the vapour phase and perturbing the equilibrium of this vapour phase by introducing a perturbing gas, such as hydrogen or a mixture of hydrogen and an inert gas, to produce the required deposition. As shown, Ge source material is packed within a tube 11 placed in a furnace 14 kept at 500-900 DEG C. (preferably 600 DEG C.). A mixture of HI and He is passed through the tube 11 to produce a vaporous mixture containing GeI2 which passes out through a nozzle 16 into a deposition chamber 17 held at 350 DEG C. H2, with or without He, is passed into the deposition chamber through a coaxial nozzle 18 to perturb the equilibrium and cause epitaxial deposition on a Ge substrate in a quartz boat 26.

公开(公告)号：US3342546A

公开(公告)日：1967-09-19

申请号：US16322361

申请日：1961-12-29

Applicant: IBM

Inventor： ARNOLD REISMAN ,  MELVIN BERKENBLIT

IPC: B01J10/00 ,  C01B19/00 ,  C01B25/06 ,  C01G1/12 ,  C22C1/00 ,  C22C1/02 ,  C22C1/04 ,  H01L21/00

CPC classification number: C22C1/02 ,  B01J10/005 ,  C01B19/007 ,  C01B25/06 ,  C01G1/12 ,  C01P2006/36 ,  C22C1/007 ,  C22C1/04 ,  H01L21/00

公开(公告)号：US3345209A

公开(公告)日：1967-10-03

申请号：US35685064

申请日：1964-04-02

Applicant: IBM

Inventor： GEORGE CHEROFF ,  ARNOLD REISMAN

IPC: C30B25/02

CPC classification number: C30B25/02 ,  C30B29/08

Abstract: Germanium is successively epitaxially deposited on and etched from a substrate 11 of Ge, GaAs, GaP or InSb by reacting HI in a H2 and He gas stream with a heated Ge bed 9 and passing this stream over the substrate at a lower temperature than the bed 9. Pulsed UV light from a Xenon source 12 irradiates the substrate Ge being deposited when the light is off and removed when the light is on, the pulse frequency may vary during the process. HI is formed by passing a mixed controlled flow of H2 and He through a heated iodine crystal bed 4 and then through a platinum wool catalyst chamber 8. In one example a single crystal substrate is continuously irradiated and the surface etched by the gas stream.ALSO: In a method of depositing Ge (see Division C7) HI is formed by passing a mixed controlled flow of H2 and He through an iodine crystal bed 4 in a thermostatically controlled oil bath at 50 DEG C. and then through a platinum wool catalyst chamber 8 at 300-400 DEG C. Sufficient hydrogen is provided to ensure complete conversion of iodine from the bed 4.

公开(公告)号：US3145120A

公开(公告)日：1964-08-18

申请号：US17269962

申请日：1962-02-12

Applicant: IBM

Inventor： GEORGE CHEROFF ,  FREDERICK HOCHBERG ,  ARNOLD REISMAN ,  SOL TRIEBWASSER

IPC: B22F3/10 ,  C04B35/547 ,  C04B35/64 ,  H01L21/00

CPC classification number: C04B35/64 ,  B22F3/1003 ,  C04B35/547 ,  H01L21/00 ,  Y10S118/90

公开(公告)号：US3366520A

公开(公告)日：1968-01-30

申请号：US38901764

申请日：1964-08-12

Applicant: IBM

Inventor： MELVIN BERKENBLIT ,  ARNOLD REISMAN

IPC: C23F3/00 ,  H01L21/00 ,  H01L21/302

CPC classification number: C23F3/00 ,  H01L21/00 ,  Y10S148/051 ,  Y10S148/054 ,  Y10S148/115

公开(公告)号：US3361600A

公开(公告)日：1968-01-02

申请号：US47810865

申请日：1965-08-09

Applicant: IBM

Inventor： ARNOLD REISMAN ,  MELVIN BERKENBLIT

IPC: C30B25/02 ,  H01L21/00 ,  H01L21/205

CPC classification number: H01L21/02532 ,  C30B25/02 ,  C30B29/08 ,  H01L21/00 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/925

公开(公告)号：US2758008A

公开(公告)日：1956-08-07

申请号：US49639655

申请日：1955-03-24

Applicant: IBM

Inventor： ARNOLD REISMAN ,  FREDERIC HOLTZBERG ,  SOL TRIEBWASSER

IPC: C01G33/00 ,  C04B35/495

CPC classification number: C04B35/495 ,  C01G33/00

公开(公告)号：US3342652A

公开(公告)日：1967-09-19

申请号：US35679364

申请日：1964-04-02

Applicant: IBM

Inventor： ARNOLD REISMAN ,  ROHR ROBERT L

IPC: C23F3/00 ,  H01L21/304 ,  H01L21/306

CPC classification number: H01L21/02019 ,  H01L21/30612 ,  H01L21/30625

公开(公告)号：US3341375A

公开(公告)日：1967-09-12

申请号：US38119064

申请日：1964-07-08

Applicant: IBM

Inventor： FREDERICK HOCHBERG ,  ARNOLD REISMAN

IPC: H01L21/22 ,  H01L21/32 ,  H01L21/336 ,  H01L27/088 ,  H01L29/00 ,  H01L29/78

CPC classification number: H01L29/00 ,  H01L21/22 ,  H01L21/32 ,  H01L27/088 ,  H01L29/66477 ,  H01L29/78 ,  Y10S148/043 ,  Y10S148/053 ,  Y10S148/085 ,  Y10S148/106