公开(公告)号：US20150064889A1

公开(公告)日：2015-03-05

申请号：US14470462

申请日：2014-08-27

Applicant: IMEC VZW

Inventor： Vasile Paraschiv ,  Gustaf Winroth ,  Efrain Altamirano Sanchez ,  Sabrina Locorotondo ,  Raja Athimulam

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/266

CPC classification number: H01L21/0276 ,  H01L21/0337 ,  H01L21/266 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821

Abstract: The present disclosure is related to a method for implanting dopant elements in a structure comprising a plurality of semiconductor fins separated by field dielectric areas. The method includes depositing an etch stop layer on the fins, depositing a BARC layer on the etch stop layer, depositing a resist layer on the BARC layer, removing a portion of the resist layer by lithography steps to thereby expose an area of the BARC layer, removing the BARC layer in the exposed area by a dry etch process using the remaining resist layer as a mask, implanting dopant elements into the fins present in the area, using the BARC and resist layers as a mask, and removing the remainder of the resist and BARC layers.

Abstract translation: 本公开涉及用于在包括由场介电区域分离的多个半导体鳍片的结构中注入掺杂剂元素的方法。 该方法包括在鳍片上沉积蚀刻停止层，在蚀刻停止层上沉积BARC层，在BARC层上沉积抗蚀剂层，通过光刻步骤去除抗蚀剂层的一部分，从而暴露BARC层的一个区域 通过使用剩余的抗蚀剂层作为掩模的干蚀刻工艺去除曝光区域中的BARC层，使用BARC和抗蚀剂层作为掩模将掺杂剂元素注入到存在于该区域中的散热片中，并且除去其余的 抗蚀剂和BARC层。