公开(公告)号：US20160181165A1

公开(公告)日：2016-06-23

申请号：US14958771

申请日：2015-12-03

Applicant: IMEC VZW

Inventor： Vladimir Samara ,  Jean-Francois de Marneffe

IPC: H01L21/66 ,  H01L21/3065

CPC classification number: H01L22/12 ,  G01B11/30 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065

Abstract: A method is provided for in-situ monitoring of etch uniformity during plasma etching, on the basis of the detection of interferometry patterns. The method is applicable to a reactor wherein a plasma is created in the area between the surface to be etched and a counter-surface arranged essentially parallel to the surface to be etched. The occurrence of interference patterns is detected at a location that is placed laterally with respect to the area between the surface to be etched and the counter-surface. The presence of an interference pattern at a particular wavelength is observed through the detection of oscillations of the light intensity measured by an optical detector, preferably by the standard Optical Emission Spectrometry tool of the reactor. When these oscillations are no longer detectable, non-uniformity exceeds a pre-defined limit. The counter surface is arranged such that the oscillations are detected.

Abstract translation: 提供了一种用于在等离子体蚀刻期间基于干涉测量图案的检测来原位监测蚀刻均匀性的方法。 该方法适用于在被蚀刻表面和基本上平行于被蚀刻表面布置的对置面之间产生等离子体的反应器。 在相对于要被蚀刻的表面和对置表面之间的区域横向放置的位置处检测到干涉图案的发生。 通过检测由光学检测器测量的光强度的振荡，优选通过反应器的标准光学发射光谱测定工具来观察特定波长处的干涉图案的存在。 当这些振荡不再可检测时，不均匀性超过预定义的极限。 相对表面被布置成使得检测到振荡。

公开(公告)号：US09847262B2

公开(公告)日：2017-12-19

申请号：US14958771

申请日：2015-12-03

Applicant: IMEC VZW

Inventor： Vladimir Samara ,  Jean-Francois de Marneffe

IPC: H01L21/302 ,  H01L21/66 ,  H01L21/3065 ,  H01J37/32 ,  G01B11/30

CPC classification number: H01L22/12 ,  G01B11/30 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065

Abstract: A method is provided for in-situ monitoring of etch uniformity during plasma etching, on the basis of the detection of interferometry patterns. The method is applicable to a reactor wherein a plasma is created in the area between the surface to be etched and a counter-surface arranged essentially parallel to the surface to be etched. The occurrence of interference patterns is detected at a location that is placed laterally with respect to the area between the surface to be etched and the counter-surface. The presence of an interference pattern at a particular wavelength is observed through the detection of oscillations of the light intensity measured by an optical detector, preferably by the standard Optical Emission Spectrometry tool of the reactor. When these oscillations are no longer detectable, non-uniformity exceeds a pre-defined limit. The counter surface is arranged such that the oscillations are detected.