公开(公告)号：US20230178131A1

公开(公告)日：2023-06-08

申请号：US18062785

申请日：2022-12-07

Applicant: IMEC VZW

Inventor： Robert Carpenter ,  Woojim Kim ,  Kiroubanand Sankaran

IPC: G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85 ,  H10N50/10

CPC classification number: G11C11/161 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/10 ,  H01L43/08

Abstract: The present disclosure provides improved VCMA MRAM devices that include an engineered magnetic structure. The disclosure also presents the engineered magnetic structure, which includes a magnetic reference layer, a tunnel barrier layer provided on the magnetic reference layer, an interface layer provided on the tunnel barrier layer, a magnetic free layer provided on the interface layer, and a cap layer provided on the magnetic free layer. The interface layer and the cap layer are engineered to enhance an orbital occupancy and/or a spin-orbit-coupling of the magnetic free layer.