公开(公告)号：US20240196755A1

公开(公告)日：2024-06-13

申请号：US18064261

申请日：2022-12-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Matthias Georg Gottwald ,  Guohan Hu ,  Stephen L. Brown ,  Alexander Reznicek

IPC: H10N50/01 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01F10/3272 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A semiconductor device that includes a substrate, a crystalline bottom electrode layer on an upper side of the semiconductor substrate, a conductive crystalline metal layer above the crystalline bottom electrode layer, and a conductive oxide layer above the conductive crystalline metal layer. The conductive oxide layer has a low resistance. The semiconductor device also includes a magnetic tunnel junction (MTJ) above the conductive crystalline metal layer, the MTJ including a tunnel barrier layer, a free layer on a first side of the tunnel barrier layer and a reference layer on a second side of the tunnel barrier layer opposite the first side.

公开(公告)号：US20240147869A1

公开(公告)日：2024-05-02

申请号：US17974148

申请日：2022-10-26

Applicant: Harry Joseph TRODAHL ,  William Freeman HOLMES-HEWETT ,  Jackson David MILLER ,  Catherine Margaret Walker POT ,  Benjamin John RUCK ,  Eva-Maria Johanna ANTON

Inventor： Harry Joseph TRODAHL ,  William Freeman HOLMES-HEWETT ,  Jackson David MILLER ,  Catherine Margaret Walker POT ,  Benjamin John RUCK ,  Eva-Maria Johanna ANTON

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/10

Abstract: A switchable magnetic device comprising a first ferromagnetic material or layer comprising or consisting of a first rare earth nitride alloy, the first rare earth nitride alloy including at least two lanthanide species; a second ferromagnetic material or layer comprising or consisting of a second rare earth nitride alloy, the second rare earth nitride alloy including at least two lanthanide species; a blocking material or layer located between the first and second ferromagnetic materials or layers. The first and second ferromagnetic materials or layers have different coercive fields to permit independent control of a magnetic alignment of the first and second ferromagnetic materials or layers; and a remanent magnetic moment of the first ferromagnetic material or layer and a remanent magnetic moment of the second ferromagnetic material or layer spatially restrict or confine a peripheral magnetic field generated when the first and second ferromagnetic materials or layers are in an anti-aligned magnetic state to permit contrasting peripheral magnetic fields to be generated when the first and second ferromagnetic materials or layers are in anti-aligned and aligned magnetic states.

公开(公告)号：US20240112840A1

公开(公告)日：2024-04-04

申请号：US17956786

申请日：2022-09-29

Applicant: Western Digital Technologies, Inc.

Inventor： Susumu OKAMURA ,  Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Randy G. SIMMONS ,  Kuok San HO ,  Hisashi TAKANO

IPC: H01F10/32 ,  C22C19/07 ,  G11B5/39 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10

CPC classification number: H01F10/329 ,  C22C19/07 ,  G11B5/39 ,  H01L27/222 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  G11B2005/0024

Abstract: Embodiments of the present disclosure relate to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices. In one or more embodiments, the CoB layer is part of a spin-orbit torque (SOT) device. In one or more embodiments, the SOT device is part of an SOT based sensor, an SOT based writer, a memory device (such as a magnetoresistive random-access memory (MRAM) device), and/or a storage device (such as a hard disk drive (HDD) or a tape drive). In one embodiment, an SOT device includes a seed layer, and a cap layer spaced from the seed layer. The SOT device includes a spin-orbit torque (SOT) layer, and a nano layer (NL) between the seed layer and the cap layer. The SOT device includes a cobalt-boron (CoB) layer between the seed layer and the cap layer, and the CoB layer is ferromagnetic.

公开(公告)号：US20240107893A1

公开(公告)日：2024-03-28

申请号：US17951596

申请日：2022-09-23

Applicant: Western Digital Technologies, Inc.

Inventor： Susumu OKAMURA ,  James Mac FREITAG ,  Yuankai ZHENG ,  Brian R. YORK

IPC: H01L43/08 ,  G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  H01F10/32 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/08 ,  G01R33/093 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/325 ,  H01F10/3272 ,  H01L27/222 ,  H01L43/10 ,  G11B2005/3996

Abstract: The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases exchange coupling field, and in turn, less magnetic noise of such devices. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure which may grow epitaxial on BCC (110) or FCC (111) textures, meaning that the (110) or (111) plane is parallel to the surface of MR device substrate. Further, amorphous layers may be inserted into the device structure to reset the growth texture of the device to a (001), (110), or (111) texture in order to promote the growth of tunneling barrier layers or antiferromagnetic (AF) pinning layers.

公开(公告)号：US20240065108A1

公开(公告)日：2024-02-22

申请号：US17944242

申请日：2022-09-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Ching-Hua Hsu ,  Chen-Yi Weng ,  Jing-Yin Jhang ,  Po-Kai Hsu

IPC: H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L27/222 ,  H01L43/10

Abstract: The high-density MRAM device of the present invention has a second interlayer dielectric (ILD) layer covering the capping layer in the MRAM cell array area and the logic area. The thickness of the second ILD layer in the MRAM cell array area is greater than that in the logic area. The composition of the second ILD layer in the logic area is different from the composition of the second ILD layer in the MRAM cell array area.

公开(公告)号：US20230397503A1

公开(公告)日：2023-12-07

申请号：US17874593

申请日：2022-07-27

Applicant: SOLAR APPLIED MATERIALS TECHNOLOGY CORP. ,  National Tsing Hua University

Inventor： CHIH-WEN TANG ,  Chih-Huang LAI ,  Wei-Chih HUANG ,  Chun-Liang YANG ,  Kuan-Ling OU

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  H01F10/32

CPC classification number: H01L43/10 ,  H01L27/222 ,  H01L43/02 ,  H01F10/3268 ,  H01F10/3254 ,  H01F10/3286 ,  C22C38/10

Abstract: Provided is a ferromagnetic free layer, comprising Fe, Co, B and an additive metal, and based on a total atomic number of the ferromagnetic free layer, a content of Co is more than 0 at % and less than 30 at %, a content of B is more than 10 at % and less than or equal to 35 at %, and a content of the additive metal is more than or equal to 2 at % and less than 10 at %; the additive metal comprises Mo, Re or a combination thereof, and a thickness of the ferromagnetic free layer is more than or equal to 1.5 nm and less than 2.5 nm. The ferromagnetic free layer can be applied to a MTJ structure as a single layer, and has sufficient thermal stability for maintaining good magnetic properties after thermal treatment, which makes sure that the MTJ structure can exert normal recording function.

公开(公告)号：US20230389444A1

公开(公告)日：2023-11-30

申请号：US17971775

申请日：2022-10-24

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Zhenyao TANG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: A magneto-resistive element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The non-magnetic layer includes a first central region, and a first outer circumferential region disposed on an outer side of the first central region. A maximum thickness of the first outer circumferential region is greater than an average thickness of the first central region.

公开(公告)号：US20230353157A1

公开(公告)日：2023-11-02

申请号：US17733166

申请日：2022-04-29

Applicant: Tanay A. Gosavi ,  Chia-Ching Lin ,  Sasikanth Manipatruni ,  Dmitri Evgenievich Nikonov ,  Ian Alexander Young ,  Ramamoorthy Ramesh ,  Darrell G. Schlom ,  Megan E. Holtz ,  Rachel A. Steinhardt

Inventor： Tanay A. Gosavi ,  Chia-Ching Lin ,  Sasikanth Manipatruni ,  Dmitri Evgenievich Nikonov ,  Ian Alexander Young ,  Ramamoorthy Ramesh ,  Darrell G. Schlom ,  Megan E. Holtz ,  Rachel A. Steinhardt

IPC: H03K19/18 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

CPC classification number: H03K19/18 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

Abstract: Magnetoelectric spin-orbit logic (MESO) devices comprise a magnetoelectric switch capacitor coupled to a spin-orbit coupling structure. The logic state of the MESO device is represented by the magnetization orientation of the ferromagnet of the magnetoelectric switch capacitor and the spin-orbit coupling structure converts the magnetization orientation of the ferromagnet to an output current. MESO devices in which all or at least some of the constituent layers of the device are perovskite materials can provide advantages such as improved control over the manufacturing of MESO devices and high quality interfaces between MESO layers due to the lattice matching of perovskite materials.

公开(公告)号：US20230309415A1

公开(公告)日：2023-09-28

申请号：US17702092

申请日：2022-03-23

Applicant: TDK Corporation

Inventor： Katsuyuki NAKADA ,  Tomoyuki SASAKI

IPC: H01L43/06 ,  H01L43/10 ,  H01L43/04

CPC classification number: H01L43/04 ,  H01L43/06 ,  H01L43/10

Abstract: A magneto resistive element includes a laminate including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer and an insulating layer configured to cover at least a part of a side surface of the laminate and including an insulator. The first ferromagnetic layer has a first non-nitride region and a first nitride region that is closer to the insulating layer than the first non-nitride region and contains nitrogen.

公开(公告)号：US20230309413A1

公开(公告)日：2023-09-28

申请号：US17942365

申请日：2022-09-12

Applicant: Kioxia Corporation

Inventor： Eiji KITAGAWA ,  Young Min EEH

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L27/224 ,  H01L43/10

Abstract: In general, according to one embodiment, a magnetic memory device includes a magnetoresistive effect element. The magnetoresistive effect element includes first to second ferromagnetic layer, a layer stack, and first to third non-magnetic layer. The layer stack is arranged on a side opposite to the first ferromagnetic layer with respect to the second ferromagnetic layer. The third non-magnetic layer is arranged on a side opposite to the second non-magnetic layer with respect to the layer stack and contains a metallic oxide. The layer stack includes a fourth non-magnetic layer being in contact with the third non-magnetic layer and containing platinum (Pt).