METHODS OF SEMICONDUCTOR DEVICE PROCESSING

    公开(公告)号:US20210193510A1

    公开(公告)日:2021-06-24

    申请号:US17119802

    申请日:2020-12-11

    Applicant: IMEC vzw

    Abstract: According to an aspect of the disclosed technology, there is provided a method comprising: providing a substrate, the substrate supporting an STI-layer and a set of fin structures, each fin structure comprising an upper portion protruding above the STI-layer, forming a spacer layer over the upper portions of the set of fin structures and the STI-layer, forming a sacrificial layer over the spacer layer, the sacrificial layer at least partially embedding the upper portions of the fin structures, partially etching back the sacrificial layer to expose spacer layer portions above upper surfaces of the upper portions of the set of fin structures, and etching the spacer layer and exposing at least the upper surfaces of the upper portions of the set of fin structures, while the sacrificial layer at least partially masks spacer layer portions above the STI-layer.

    Methods of semiconductor device processing

    公开(公告)号:US11527431B2

    公开(公告)日:2022-12-13

    申请号:US17119802

    申请日:2020-12-11

    Applicant: IMEC vzw

    Abstract: According to an aspect of the disclosed technology, there is provided a method comprising: providing a substrate, the substrate supporting an STI-layer and a set of fin structures, each fin structure comprising an upper portion protruding above the STI-layer, forming a spacer layer over the upper portions of the set of fin structures and the STI-layer, forming a sacrificial layer over the spacer layer, the sacrificial layer at least partially embedding the upper portions of the fin structures, partially etching back the sacrificial layer to expose spacer layer portions above upper surfaces of the upper portions of the set of fin structures, and etching the spacer layer and exposing at least the upper surfaces of the upper portions of the set of fin structures, while the sacrificial layer at least partially masks spacer layer portions above the STI-layer.

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