公开(公告)号：US20140017416A1

公开(公告)日：2014-01-16

申请号：US14025418

申请日：2013-09-12

Applicant: IMRA AMERICA, INC.

Inventor： Bing LIU ,  Zhendong Hu ,  Yong Che ,  Yuzuru Uehara

IPC: C23C14/22

CPC classification number: C23C14/22 ,  C23C14/083 ,  C23C14/28

Abstract: A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion. This can provide small deposition feature sizes, which can be similar in size to the laser focal spot, and provides a novel method for direct deposition of patterned materials.

Abstract translation: 公开了一种p型半导体氧化锌（ZnO）膜及其制备方法。 该膜与磷（P）和锂（Li）共掺杂。 描述脉冲激光沉积方案用于生长膜。 进一步描述的是使用透明衬底的脉冲激光沉积过程，其包括脉冲激光源，在脉冲激光的波长处是透明的衬底和多目标系统。 脉冲激光器的光路布置成使得脉冲激光从衬底的背面入射，穿过衬底，然后聚焦在靶上。 通过将基板朝向目标平移，这种几何布置可以在羽流的角宽度扩大之前利用消融羽流的根部沉积小特征，其可以沿着目标表面法线存在于一维过渡阶段中 三维绝热膨胀。 这可以提供小的沉积特征尺寸，其尺寸可以与激光焦点类似，并且提供用于直接沉积图案化材料的新颖方法。