公开(公告)号：US20160056180A1

公开(公告)日：2016-02-25

申请号：US14930171

申请日：2015-11-02

Applicant: INTEL CORPORATION

Inventor： ALEJANDRO X. LEVANDER ,  KIMIN JUN

IPC: H01L27/12 ,  H01L29/06 ,  H01L29/26

CPC classification number: H01L27/1207 ,  H01L21/02002 ,  H01L21/02521 ,  H01L21/02634 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/265 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/76251 ,  H01L21/76254 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/26

Abstract: Techniques are disclosed for heteroepitaxial growth of a layer of lattice-mismatched semiconductor material on an initial substrate, and transfer of a defect-free portion of that layer to a handle wafer or other suitable substrate for integration. In accordance with some embodiments, transfer may result in the presence of island-like oxide structures on the handle wafer/substrate, each having a defect-free island of the lattice-mismatched semiconductor material embedded within its upper surface. Each defect-free semiconductor island may have one or more crystalline faceted edges and, with its accompanying oxide structure, may provide a planar surface for integration. In some cases, a layer of a second, different semiconductor material may be heteroepitaxially grown over the handle wafer/substrate to fill areas around the transferred islands. In some other cases, the handle wafer/substrate itself may be homoepitaxially grown to fill areas around the transferred islands.