公开(公告)号：US20210159172A1

公开(公告)日：2021-05-27

申请号：US16697580

申请日：2019-11-27

Applicant: Infineon Technologies AG

Inventor： Thomas BASLER ,  Andreas HUERNER ,  Caspar LEENDERTZ ,  Dethard PETERS

IPC: H01L23/525 ,  H01L23/62 ,  H01L29/16

Abstract: A semiconductor device is provided. In an embodiment, the semiconductor device comprises a control region, a first power region, a second power region, an isolation region and/or a short circuit structure. The control region comprises a control terminal. The first power region comprises a first power terminal. The second power region comprises a second power terminal. The isolation region is between the control region and the first power region. The short circuit structure extends from the first power region, through the isolation region, to the control region. The short circuit structure is configured to form a low-resistive connection between the control region and the first power region during a failure state of the semiconductor device.