公开(公告)号：US20210159172A1

公开(公告)日：2021-05-27

申请号：US16697580

申请日：2019-11-27

Applicant: Infineon Technologies AG

Inventor： Thomas BASLER ,  Andreas HUERNER ,  Caspar LEENDERTZ ,  Dethard PETERS

IPC: H01L23/525 ,  H01L23/62 ,  H01L29/16

Abstract: A semiconductor device is provided. In an embodiment, the semiconductor device comprises a control region, a first power region, a second power region, an isolation region and/or a short circuit structure. The control region comprises a control terminal. The first power region comprises a first power terminal. The second power region comprises a second power terminal. The isolation region is between the control region and the first power region. The short circuit structure extends from the first power region, through the isolation region, to the control region. The short circuit structure is configured to form a low-resistive connection between the control region and the first power region during a failure state of the semiconductor device.

公开(公告)号：US20210193435A1

公开(公告)日：2021-06-24

申请号：US17127309

申请日：2020-12-18

Applicant: Infineon Technologies AG

Inventor： Moriz JELINEK ,  Michael HELL ,  Caspar LEENDERTZ ,  Kristijan Luka MLETSCHNIG ,  Hans-Joachim SCHULZE

IPC: H01J37/317 ,  H01L21/265

Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

公开(公告)号：US20250113592A1

公开(公告)日：2025-04-03

申请号：US18374895

申请日：2023-09-29

Applicant: Infineon Technologies AG

Inventor： Ravi Keshav JOSHI ,  Fabian RASINGER ,  Kristijan Luka MLETSCHNIG ,  Romain ESTEVE ,  Caspar LEENDERTZ

IPC: H01L27/07 ,  H01L29/423 ,  H01L29/78 ,  H01L29/872

Abstract: In an embodiment, a semiconductor device is provided. The semiconductor device may include a semiconductor body including a first doped region of a first conductivity type and a second doped region of a second conductivity type. The semiconductor device may include a metal structure, in the semiconductor body, overlying the second doped region. The metal structure may include a first sidewall adjacent a first portion of the first doped region, a second sidewall adjacent a second portion of the first doped region, and a third sidewall adjacent the second doped region. The semiconductor device may include a Schottky contact including a junction of the third sidewall of the metal structure with the second doped region.

公开(公告)号：US20240145247A1

公开(公告)日：2024-05-02

申请号：US18407587

申请日：2024-01-09

Applicant: Infineon Technologies AG

Inventor： Moriz JELINEK ,  Michael HELL ,  Caspar LEENDERTZ ,  Kristijan Luka MLETSCHNIG ,  Hans-Joachim SCHULZE

IPC: H01L21/265 ,  H01J37/317 ,  H01L21/04 ,  H01L29/36

CPC classification number: H01L21/26586 ,  H01J37/3171 ,  H01L21/046 ,  H01L21/047 ,  H01L21/265 ,  H01L21/2652 ,  H01L29/36 ,  H01J2237/24578 ,  H01J2237/31703

Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

公开(公告)号：US20230083106A1

公开(公告)日：2023-03-16

申请号：US17476829

申请日：2021-09-16

Applicant: Infineon Technologies AG

Inventor： Moriz JELINEK ,  Paul ELLINGHAUS ,  Axel KOENIG ,  Caspar LEENDERTZ ,  Hans-Joachim SCHULZE ,  Werner SCHUSTEREDER

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/04

Abstract: A method includes orienting a silicon carbide layer to a first crystal channel direction relative to a first ion beam and implanting phosphorous into the silicon carbide layer using the first ion beam to define a first doped region in the silicon carbide layer. A deviation angle between the first crystal channel direction and the first ion beam is less than ±1° and the first crystal channel direction comprises a direction or a direction.

公开(公告)号：US20200381253A1

公开(公告)日：2020-12-03

申请号：US16886175

申请日：2020-05-28

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim SCHULZE ,  Romain ESTEVE ,  Moriz JELINEK ,  Caspar LEENDERTZ ,  Werner SCHUSTEREDER

IPC: H01L21/04 ,  H01L29/06 ,  H01L29/16

Abstract: A silicon carbide substrate is provided that includes a drift layer of a first conductivity type and a trench extending from a main surface of the silicon carbide substrate into the drift layer. First dopants are implanted through a first trench sidewall of the trench. The first dopants have a second conductivity type and are implanted at a first implant angle into the silicon carbide substrate, wherein at the first implant angle channeling occurs in the silicon carbide substrate. The first dopants form a first compensation layer extending parallel to the first trench sidewall.

公开(公告)号：US20200219972A1

公开(公告)日：2020-07-09

申请号：US16733329

申请日：2020-01-03

Applicant: Infineon Technologies AG

Inventor： Caspar LEENDERTZ ,  Rudolf ELPELT ,  Romain ESTEVE ,  Thomas GANNER ,  Jens Peter KONRATH ,  Larissa WEHRHAHN-KILIAN

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47

Abstract: A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.