公开(公告)号：US11430749B2

公开(公告)日：2022-08-30

申请号：US16662425

申请日：2019-10-24

Applicant: Infineon Technologies AG

Inventor： Markus Mergens ,  Werner Simbuerger

IPC: H01L23/60 ,  H01L29/66 ,  H01L21/285 ,  H01L23/522

Abstract: According to one configuration, a fabricator produces an electronic device to include: a substrate; a transistor circuit disposed on the substrate; silicide material disposed on first regions of the transistor circuit; and the silicide material absent from second regions of the transistor circuit. Absence of the silicide material over the second regions of the respective of the transistor circuit increases a resistance of one or more parasitic paths (such as one or more parasitic transistors) in the transistor circuit. The increased resistance in the one or more parasitic paths provides better protection of the transistor circuit against electro-static discharge conditions.

公开(公告)号：US20140029145A1

公开(公告)日：2014-01-30

申请号：US13951157

申请日：2013-07-25

Applicant: Infineon Technologies AG

Inventor： Michael Mayerhofer ,  Andrei Cobzaru ,  Adrian Finney ,  Ulrich Glaser ,  Gilles Guerrero ,  Bogdan-Eugen Matei ,  Markus Mergens

IPC: H01L27/02

CPC classification number: H01L27/0255 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A two-stage protection device for an electronic component protects against transient disturbances. The electronic component may be a semiconductor component, and may include one or multiple transistors and/or an integrated circuit. The protection device is connected to at least a first contact and a second contact of the electronic component, and is disposed essentially in parallel to the component that is to be protected, between the first contact and the second contact. The protection device includes a first stage with at least one diode and a second stage separated from the first stage by a resistor. The second stage includes at least one diode arrangement having two back-to-back disposed diodes which are disposed cathode-to-cathode.

Abstract translation: 用于电子部件的两级保护装置可防止瞬态干扰。 电子部件可以是半导体部件，并且可以包括一个或多个晶体管和/或集成电路。 保护装置连接到电子部件的至少第一触点和第二触点，并且在第一触点和第二触点之间基本上与被保护部件平行地设置。 保护装置包括具有至少一个二极管的第一级和通过电阻与第一级分离的第二级。 第二级包括至少一个二极管布置，其具有阴极至阴极设置的两个背对背布置的二极管。

公开(公告)号：US09159719B2

公开(公告)日：2015-10-13

申请号：US13951157

申请日：2013-07-25

Applicant: Infineon Technologies AG

Inventor： Michael Mayerhofer ,  Andrei Cobzaru ,  Adrian Finney ,  Ulrich Glaser ,  Gilles Guerrero ,  Bogdan-Eugen Matei ,  Markus Mergens

IPC: H02H9/00 ,  H01L27/02

CPC classification number: H01L27/0255 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A two-stage protection device for an electronic component protects against transient disturbances. The electronic component may be a semiconductor component, and may include one or multiple transistors and/or an integrated circuit. The protection device is connected to at least a first contact and a second contact of the electronic component, and is disposed essentially in parallel to the component that is to be protected, between the first contact and the second contact. The protection device includes a first stage with at least one diode and a second stage separated from the first stage by a resistor. The second stage includes at least one diode arrangement having two back-to-back disposed diodes which are disposed cathode-to-cathode.

Abstract translation: 用于电子部件的两级保护装置可防止瞬态干扰。 电子部件可以是半导体部件，并且可以包括一个或多个晶体管和/或集成电路。 保护装置连接到电子部件的至少第一触点和第二触点，并且在第一触点和第二触点之间基本上与被保护部件平行地设置。 保护装置包括具有至少一个二极管的第一级和通过电阻与第一级分离的第二级。 第二级包括至少一个二极管布置，其具有阴极至阴极设置的两个背对背布置的二极管。