公开(公告)号：US20250140543A1

公开(公告)日：2025-05-01

申请号：US18499259

申请日：2023-11-01

Applicant: Intel Corporation

Inventor： Ilya KARPOV ,  Tristan TRONIC ,  Arnab SEN GUPTA ,  I-Cheng TUNG ,  Jin WANG ,  Matthew METZ ,  Eric MATTSON

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01L21/285 ,  H01L21/308

Abstract: The present disclosure is directed to a high-voltage magnetron sputtering tool with an enhanced power source including a vacuum chamber containing a magnetron cathode with a magnet array, a target, and an anode, as well as the enhanced power source that includes high-power DC power source and controller that produces a pulsed output. In an aspect, the enhanced power source may include a standard power source that is retrofitted a supplemental high-power DC power source and controller, and alternatively, a high-power DC power source and controller that replaces the standard power source. In addition, the present disclosure is directed to methods for depositing a hydrogen-free diamond-like carbon film on a semiconductor substrate using the high-voltage magnetron sputtering tool. In an aspect, the hydrogen-free diamond-like carbon film may be an etch mask having a sp3 carbon bonding that is greater than 60 percent.