公开(公告)号：US20200066511A1

公开(公告)日：2020-02-27

申请号：US16113159

申请日：2018-08-27

Applicant: Intel Corporation

Inventor： Ilya KARPOV ,  Brian DOYLE ,  Prashant MAJHI ,  Abhishek SHARMA ,  Ravi PILLARISETTY

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01G4/12 ,  C23C14/08 ,  C23C14/34 ,  C23C14/54

Abstract: Embodiments disclosed herein comprise a ferroelectric material layer and methods of forming such materials. In an embodiment, the ferroelectric material layer comprises hafnium oxide with an orthorhombic phase. In an embodiment, the ferroelectric material layer may also comprise trace elements of a working gas. Additional embodiments may comprise: a semiconductor channel, a source region on a first end of the semiconductor channel, a drain region on a second end of the semiconductor channel, a gate electrode over the semiconductor channel, and a gate dielectric between the gate electrode and the semiconductor channel. In an embodiment, the gate dielectric includes a ferroelectric hafnium oxide. In an embodiment, the hafnium oxide is substantially free from dopants.

公开(公告)号：US20190279697A1

公开(公告)日：2019-09-12

申请号：US16319239

申请日：2016-09-30

Applicant: INTEL CORPORATION

Inventor： Ilya KARPOV ,  Yih WANG ,  Fatih HAMZAOGLU ,  James CLARKE

IPC: G11C11/00 ,  H01L27/108 ,  H01L27/11514 ,  G11C11/22 ,  G11C11/407

Abstract: An apparatus is described. The apparatus includes a semiconductor chip that includes logic circuitry, embedded dynamic random access memory (DRAM) cells and embedded ferroelectric random access memory (FeRAM) cells.

公开(公告)号：US20250140543A1

公开(公告)日：2025-05-01

申请号：US18499259

申请日：2023-11-01

Applicant: Intel Corporation

Inventor： Ilya KARPOV ,  Tristan TRONIC ,  Arnab SEN GUPTA ,  I-Cheng TUNG ,  Jin WANG ,  Matthew METZ ,  Eric MATTSON

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01L21/285 ,  H01L21/308

Abstract: The present disclosure is directed to a high-voltage magnetron sputtering tool with an enhanced power source including a vacuum chamber containing a magnetron cathode with a magnet array, a target, and an anode, as well as the enhanced power source that includes high-power DC power source and controller that produces a pulsed output. In an aspect, the enhanced power source may include a standard power source that is retrofitted a supplemental high-power DC power source and controller, and alternatively, a high-power DC power source and controller that replaces the standard power source. In addition, the present disclosure is directed to methods for depositing a hydrogen-free diamond-like carbon film on a semiconductor substrate using the high-voltage magnetron sputtering tool. In an aspect, the hydrogen-free diamond-like carbon film may be an etch mask having a sp3 carbon bonding that is greater than 60 percent.