公开(公告)号：US10026829B2

公开(公告)日：2018-07-17

申请号：US15434981

申请日：2017-02-16

Applicant: Intel Corporation

Inventor： Annalisa Cappellani ,  Stephen M. Cea ,  Tahir Ghani ,  Harry Gomez ,  Jack T. Kavalieros ,  Patrick H. Keys ,  Seiyon Kim ,  Kelin J. Kuhn ,  Aaron D. Lilak ,  Rafael Rios ,  Mayank Sahni

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/762 ,  H01L29/06 ,  H01L29/775 ,  H01L27/12 ,  B82Y10/00 ,  H01L29/423

Abstract: Semiconductor devices with isolated body portions are described. For example, a semiconductor structure includes a semiconductor body disposed above a semiconductor substrate. The semiconductor body includes a channel region and a pair of source and drain regions on either side of the channel region. An isolation pedestal is disposed between the semiconductor body and the semiconductor substrate. A gate electrode stack at least partially surrounds a portion of the channel region of the semiconductor body.