公开(公告)号：US12261122B2

公开(公告)日：2025-03-25

申请号：US18370198

申请日：2023-09-19

Applicant: Intel Corporation

Inventor： Atul Madhavan ,  Nicholas J. Kybert ,  Mohit K. Haran ,  Hiten Kothari

IPC: H01L23/535 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/45 ,  H01L29/51

Abstract: Contact over active gate (COAG) structures with etch stop layers, and methods of fabricating contact over active gate (COAG) structures using etch stop layers, are described. In an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. A first dielectric etch stop layer is directly on and continuous over the trench insulating layers and the gate insulating layers. A second dielectric etch stop layer is directly on and continuous over the first dielectric etch stop layer, the second dielectric etch stop layer distinct from the first dielectric etch stop layer. An interlayer dielectric material is on the second dielectric etch stop layer.