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1.发明申请公开(公告)号：US20190034105A1
公开(公告)日：2019-01-31
申请号：US15857530
申请日：2017-12-28
Applicant: Intel Corporation
Inventor： Shankar NATARAJAN , Ramkarthik GANESAN
Abstract: A method is described. The method includes programming multi-bit storage cells of multiple FLASH memory chips in a lower density storage mode. The method also includes programming the multi-bit storage cells of the multiple FLASH memory chips in a higher density storage mode after at least 25% of the storage capacity of the multiple FLASH memory chips has been programmed.
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