公开(公告)号：US20210305245A1

公开(公告)日：2021-09-30

申请号：US16833094

申请日：2020-03-27

Applicant: Intel Corporation

Inventor： Richard HUDECZEK ,  Philipp RIESS ,  Richard GEIGER ,  Peter BAUMGARTNER

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423

Abstract: Embodiments disclosed herein include resonators, such as resonant fin transistors (RFTs). In an embodiment a resonator comprises a substrate, a set of contact fins over the substrate, a first contact proximate to a first end of the set of contact fins, and a second contact proximate to a second end of the set of contact fins. In an embodiment, the resonator further comprises a set of skip fins over the substrate and adjacent to the set of contact fins. In an embodiment, the resonator further comprises a gate electrode over the set of contact fins and the set of skip fins, wherein the gate electrode is between the first contact and the second contact.