公开(公告)号：US20210399002A1

公开(公告)日：2021-12-23

申请号：US16910020

申请日：2020-06-23

Applicant: Intel Corporation

Inventor： Tanuj TRIVEDI ,  Walid M. HAFEZ ,  Rohan BAMBERY ,  Daniel B. O'Brien ,  Christopher Alan NOLPH ,  Rahul RAMASWAMY ,  Ting CHANG

IPC: H01L27/11568 ,  H01L49/02 ,  H01L29/78 ,  H01L29/792 ,  H01L21/28 ,  H01L29/66

Abstract: Embodiments disclosed herein include a semiconductor device and methods of forming such a device. In an embodiment, the semiconductor device comprises a substrate and a transistor on the substrate. In an embodiment, the transistor comprises a first gate electrode, where the first gate electrode is part of a first array of gate electrodes with a first pitch. In an embodiment, the first gate electrode has a first average grain size. In an embodiment, the semiconductor device further comprises a component cell on the substrate. In an embodiment, the component cell comprises a second gate electrode, where the second gate electrode is part of a second array of gate electrodes with a second pitch that is larger than the first pitch. In an embodiment, the second gate electrode has a second average grain size that is larger than the first average grain size.