公开(公告)号：US20230284427A1

公开(公告)日：2023-09-07

申请号：US17686241

申请日：2022-03-03

Applicant: Intel Corporation

Inventor： Charles AUGUSTINE ,  Seenivasan SUBRAMANIAM ,  Patrick MORROW ,  Muhammad M. KHELLAH

IPC: H01L27/11 ,  G11C11/412 ,  G11C11/419

CPC classification number: H01L27/1104 ,  G11C11/412 ,  G11C11/419

Abstract: Embodiments herein relate to scaling of Static Random Access Memory (SRAM) cells. An SRAM cell include nMOS transistors on one level above pMOS transistors on a lower level. Transistors on the two levels can have overlapping footprints to save space. Additionally, the SRAM cell can use pMOS access transistors in place of nMOS access transistors to allow reuse of areas of the cell which would otherwise be used by the nMOS access transistors. In one approach, gate interconnects are provided in these areas, which have an overlapping footprint with underlying pMOS access transistors to save space. The SRAM cells can be connected to bit lines and word lines in overhead and/or bottom metal layers. In another aspect, SRAM cells of a column are connected to bit lines in an overlying M0 metal layer and an underlying BM0 metal layers to reduce capacitance.

公开(公告)号：US20250107061A1

公开(公告)日：2025-03-27

申请号：US18372521

申请日：2023-09-25

Applicant: Intel Corporation

Inventor： Patrick MORROW ,  Seenivasan SUBRAMANIAM ,  Anandkumar MAHADEVAN PILLAI

IPC: H10B10/00 ,  H01L23/528

Abstract: Structures having stacked transistors with backside access are described. In an example, an integrated circuit structure includes a front side structure. The front side structure includes a device layer including first, second, third and fourth stacks of nanowires and corresponding first, second, third and fourth overlying gate lines, and the device layer including first, second, third, fourth and fifth source or drain structures and corresponding overlying trench contacts alternating with the stacks of nanowires and the overlying gate lines, and one or more metallization layers above the device layer. A backside structure includes a backside via connection coupled to a bottom portion of the third source or drain structure, the bottom portion of the third source or drain structure isolated from a top portion of the third source or drain structure.