公开(公告)号：US20170084643A1

公开(公告)日：2017-03-23

申请号：US15264822

申请日：2016-09-14

Applicant: Intermolecular, Inc.

Inventor： Gaurav Saraf ,  Howard Lin ,  Prashant Phatak ,  Sang Lee ,  Minh Huu Le ,  Hieu Pham ,  Congwen Yi

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/285 ,  H01L49/02

CPC classification number: H01L27/1255 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/2855 ,  H01L27/1259 ,  H01L28/60

Abstract: Embodiments provided herein describe storage capacitors for active matrix displays and methods for making such capacitors. A substrate is provided. A bottom electrode is formed above the substrate. A dielectric layer is formed above the bottom electrode. A top electrode is formed above the dielectric layer. A layer including an amorphous or crystalline material may be formed between the dielectric layer and the top electrode. The bottom electrode may have a thickness of at least 1000 Å, be formed in a gaseous environment of at least 95% argon, and/or not undergo an annealing process before the formation of a dielectric layer above the bottom electrode. The dielectric layer may include a nitrided high-k dielectric material.

公开(公告)号：US20170084680A1

公开(公告)日：2017-03-23

申请号：US15264877

申请日：2016-09-14

Applicant: Intermolecular, Inc.

Inventor： Howard Lin ,  Gaurav Saraf ,  Kiet Vuong

IPC: H01L49/02 ,  H01L21/02

CPC classification number: H01L28/55 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/02329

Abstract: Embodiments provided herein describe methods and systems for forming high-k dielectric materials, as well as devices that utilize such materials. A property of a high-k dielectric material is selected. A value of the selected property of the high-k dielectric material is selected. A chemical composition of the high-k dielectric material is selected from a plurality of chemical compositions of the high-k dielectric material. The selected chemical composition of the high-k dielectric material includes an amount of nitridation associated with the selected value of the selected property of the high-k dielectric material. The high-k dielectric material is formed with the selected chemical composition.