公开(公告)号：US20140187051A1

公开(公告)日：2014-07-03

申请号：US13727818

申请日：2012-12-27

Applicant: Intermolecular Inc.

Inventor： Joanna Wasyluk ,  Paul Besser ,  Stephen Kronholz ,  Gregory Nowling ,  James Schaeffer

IPC: H01L21/306

CPC classification number: H01L21/32134 ,  H01L29/66545

Abstract: A method for removing poly-silicon dummy gate structures using an ammonium hydroxide-hydrogen peroxide-water (APM) solution with concentrations between 1:10:20 and 1:1:2 and at temperatures between 20 C and 80 C for times between 1 minute and 60 minutes.

Abstract translation: 一种使用氢氧化铵 - 过氧化氢 - 水（APM）溶液去除多硅虚拟栅极结构的方法，浓度为1:10:20至1:1:2，温度为20℃至80℃之间的时间为1 分钟和60分钟。