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    Wet Etching of Silicon Containing Antireflective Coatings
    1.
    发明申请
    Wet Etching of Silicon Containing Antireflective Coatings 有权
    含硅防腐涂层的湿法蚀刻

    公开(公告)号：US20150187596A1

    公开(公告)日：2015-07-02

    申请号：US14140737

    申请日：2013-12-26

    Applicant: Intermolecular Inc.

    Inventor： Gregory Nowling ,  John Fitzsimmons

    IPC: H01L21/311

    CPC classification number: H01L21/31111 ,  H01L21/31133 ,  H01L21/67086

    Abstract: Provided are methods for processing semiconductor substrates or, more specifically, etching silicon containing antireflective coatings (SiARCs) from the substrates while preserving silicon oxides layers disposed on the same substrates. An etching solution including sulfuric acid and hydrofluoric acid may be used for these purposes. In some embodiments, the weight ratio of sulfuric acid to hydrofluoric acid in the etching solution is between about 15:1 and 100:1 (e.g., about 60:1). The temperature of the etching solution may be between about 30° C. and 50° C. (e.g., about 40° C., during etching). It has been found that such processing conditions provide a SiARC etching rate of at least about 50 nanometers per minute and selectivity of SiARC over silicon oxide of greater than about 10:1 or even greater than about 50:1. The same etching solution may be also used to remove photoresist, organic dielectric, and titanium nitride.

    Abstract translation: 提供了用于处理半导体衬底的方法，或者更具体地，从衬底中蚀刻含硅抗反射涂层（SiARCs），同时保留设置在相同衬底上的氧化硅层。 包括硫酸和氢氟酸的蚀刻溶液可以用于这些目的。 在一些实施方案中，蚀刻溶液中硫酸与氢氟酸的重量比为约15:1至100:1（例如约60:1）。 蚀刻溶液的温度可以在约30℃至50℃之间（例如在蚀刻期间约为40℃）。 已经发现，这样的处理条件提供至少约50纳米每分钟的SiARC蚀刻速率，SiARC相对于氧化硅的选择性大于约10:1或甚至大于约50:1。 也可以使用相同的蚀刻溶液去除光致抗蚀剂，有机电介质和氮化钛。

    Wet etching of silicon containing antireflective coatings
    3.
    发明授权
    Wet etching of silicon containing antireflective coatings 有权
    含硅抗反射涂层的湿蚀刻

    公开(公告)号：US09418865B2

    公开(公告)日：2016-08-16

    申请号：US14140737

    申请日：2013-12-26

    Applicant: Intermolecular Inc. ,  International Business Machines Corporation

    Inventor： Gregory Nowling ,  John Fitzsimmons

    IPC: H01L21/311

    CPC classification number: H01L21/31111 ,  H01L21/31133 ,  H01L21/67086

    Abstract: Provided are methods for processing semiconductor substrates or, more specifically, etching silicon containing antireflective coatings (SiARCs) from the substrates while preserving silicon oxides layers disposed on the same substrates. An etching solution including sulfuric acid and hydrofluoric acid may be used for these purposes. In some embodiments, the weight ratio of sulfuric acid to hydrofluoric acid in the etching solution is between about 15:1 and 100:1 (e.g., about 60:1). The temperature of the etching solution may be between about 30° C. and 50° C. (e.g., about 40° C., during etching). It has been found that such processing conditions provide a SiARC etching rate of at least about 50 nanometers per minute and selectivity of SiARC over silicon oxide of greater than about 10:1 or even greater than about 50:1. The same etching solution may be also used to remove photoresist, organic dielectric, and titanium nitride.

    Abstract translation: 提供了用于处理半导体衬底的方法，或者更具体地，从衬底中蚀刻含硅抗反射涂层（SiARCs），同时保留设置在相同衬底上的氧化硅层。 包括硫酸和氢氟酸的蚀刻溶液可以用于这些目的。 在一些实施方案中，蚀刻溶液中硫酸与氢氟酸的重量比为约15:1至100:1（例如约60:1）。 蚀刻溶液的温度可以在约30℃至50℃之间（例如在蚀刻期间约为40℃）。 已经发现，这样的处理条件提供至少约50纳米每分钟的SiARC蚀刻速率，SiARC相对于氧化硅的选择性大于约10:1或甚至大于约50:1。 也可以使用相同的蚀刻溶液去除光致抗蚀剂，有机电介质和氮化钛。

    Etching Silicon Nitride Using Dilute Hydrofluoric Acid
    4.
    发明申请
    Etching Silicon Nitride Using Dilute Hydrofluoric Acid 审中-公开
    使用稀氢氟酸蚀刻氮化硅

    公开(公告)号：US20140179107A1

    公开(公告)日：2014-06-26

    申请号：US13723613

    申请日：2012-12-21

    Applicant: INTERMOLECULAR INC.

    Inventor： Gregory Nowling

    IPC: H01L21/306

    CPC classification number: H01L21/31111 ,  H01L21/67086 ,  H01L27/105 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659

    Abstract: Provided are methods for processing semiconductor substrates or, more specifically, methods for etching silicon nitride structures without damaging photoresist structures that are exposed to the same etching solutions. In some embodiments, a highly diluted hydrofluoric acid is used for etching silicon nitride. A volumetric ratio of water to hydrofluoric acid may be between 1000:1 and 10,000:1. This level of dilution results in a low etching selectivity of photoresist to silicon nitride. In some embodiments, this selectivity is less than 0.2 and even less than 0.02. The solution may be kept at a temperature of between 60° C. and 90° C. to increase silicon nitride etching rates and to maintain high selectivity. The process may proceed until complete removal of the silicon nitride structure, while the photoresist structure may remain substantially intact.

    Abstract translation: 提供了用于处理半导体衬底的方法，更具体地，用于蚀刻氮化硅结构而不损害暴露于相同蚀刻溶液的光致抗蚀剂结构的方法。 在一些实施方案中，高度稀释的氢氟酸用于蚀刻氮化硅。 水与氢氟酸的体积比可以在1000:1和10,000:1之间。 这种稀释度导致光致抗蚀剂对氮化硅的蚀刻选择性低。 在一些实施方案中，该选择性小于0.2且甚至小于0.02。 该溶液可以保持在60℃和90℃之间的温度以增加氮化硅蚀刻速率并保持高选择性。 该过程可以进行直到完全去除氮化硅结构，同时光致抗蚀剂结构可以保持基本上完整。

    Etching of semiconductor structures that include titanium-based layers
    5.
    发明申请
    Etching of semiconductor structures that include titanium-based layers 有权
    包括钛基层的半导体结构的蚀刻

    公开(公告)号：US20150132953A1

    公开(公告)日：2015-05-14

    申请号：US14079473

    申请日：2013-11-13

    Applicant: Intermolecular Inc.

    Inventor： Gregory Nowling ,  John Foster

    IPC: H01L21/3213

    CPC classification number: H01L21/32133 ,  C23F1/26 ,  C23F4/00 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/67086 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

    Abstract: Two-step process sequences uniformly etch both tungsten-based and titanium-based structures on a substrate. A sequence of wet etches using peroxide and heated nitric acid uniformly recesses a metal stack that includes W, TiN, and TiAl. W, TiN and TiC are uniformly recessed by a peroxide etch at ˜25 C followed by an acid solution with a very small amount of added peroxide at ˜60 C. TiC is etched without etching trench oxides or other metals in a work-function metal stack by either (1) highly-dilute of ultra-dilute HF at 25-35 C, (2) dilute HCl at 25-60 C, (3) dilute NH4OH at 25-60 C, or (4) solution (2) or (3) with small amounts of peroxide. Other metals in the stack may then be plasma-etched without being blocked by TiC residues.

    Abstract translation: 两步工艺顺序均匀地蚀刻基材上的钨基和钛基结构。 使用过氧化物和加热的硝酸的湿蚀刻序列均匀地凹陷包括W，TiN和TiAl的金属堆叠。 W，TiN和TiC在〜25℃下通过过氧化物蚀刻均匀地凹陷，随后在〜60℃下加入非常少量的加成过氧化物的酸溶液。在没有刻蚀沟槽氧化物或其他金属的功函数金属中蚀刻TiC （1）在25-35℃高浓度超稀释HF，（2）在25-60℃稀释HCl，（3）在25-60℃稀释NH 4 OH，或（4）溶液（2） 或（3）少量过氧化物。 然后，堆叠中的其它金属可以被等离子体蚀刻而不被TiC残留物阻挡。

    Selective Etching of Hafnium Oxide Using Diluted Hydrofluoric Acid
    6.
    发明申请
    Selective Etching of Hafnium Oxide Using Diluted Hydrofluoric Acid 审中-公开
    使用稀释的氢氟酸选择性腐蚀氧化铪

    公开(公告)号：US20140187052A1

    公开(公告)日：2014-07-03

    申请号：US13727776

    申请日：2012-12-27

    Applicant: INTERMOLECULAR INC.

    Inventor： Gregory Nowling

    IPC: H01L21/306

    CPC classification number: H01L21/31111 ,  H01L21/28123 ,  H01L21/67086 ,  H01L29/517 ,  H01L29/66515 ,  H01L29/6653

    Abstract: Provided are methods for processing semiconductor substrates having hafnium oxide structures as well as silicon nitride and/or silicon oxide structures. Etching solutions and processing conditions described herein provide high etching selectivity of hafnium oxide relative to these other materials. As such, the hafnium oxide structures can be removed (partially or completely) without significant damage to these other structures. In some embodiments, the etching selectivity of hafnium oxide relative to silicon oxide is at least about 10 and even at least about 30. Etching rates of hafnium oxide may be between 3 and 100 Angstroms per minute. A highly diluted water based solution of hydrofluoric acid, e.g., having a dilution ratio of 1000:1 to 10,000:1, may be used for etching to achieve these etching rates and selectivity levels. The solution may be maintained at a temperature of 25° C. to 90° C. during etching.

    Abstract translation: 提供了用于处理具有氧化铪结构以及氮化硅和/或氧化硅结构的半导体衬底的方法。 本文所述的蚀刻溶液和加工条件提供相对于这些其它材料的氧化铪的高蚀刻选择性。 因此，可以除去（部分或完全）氧化铪结构，而不会对这些其它结构造成显着的损害。 在一些实施方案中，氧化铪相对于氧化硅的蚀刻选择性为至少约10，甚至至少约30。氧化铪的蚀刻速率可以在3至100埃/分钟之间。 可以使用例如稀释比为1000:1至10,000:1的高度稀释的氢氟酸水溶液进行蚀刻以达到这些蚀刻速率和选择性水平。 在蚀刻期间，溶液可以保持在25℃至90℃的温度。

    Selective etching of titanium nitride
    7.
    发明授权
    Selective etching of titanium nitride 有权
    选择性蚀刻氮化钛

    公开(公告)号：US08916479B1

    公开(公告)日：2014-12-23

    申请号：US13913672

    申请日：2013-06-10

    Applicant: Intermolecular Inc.

    Inventor： Gregory Nowling

    IPC: H01L21/461 ,  H01L21/3213

    CPC classification number: H01L21/32134

    Abstract: Provided are methods for processing semiconductor substrates having titanium nitride (TiN) structures as well as aluminum (Al) structures and, in some embodiments, other structures, such as silicon germanium (SiGe), tantalum nitride (TaN), hafnium oxide (HfOx), silicon nitride (SiN), and/or silicon oxide (SiO2) structures. Etching solutions and processing conditions described herein provide high etching selectivity of titanium nitride relative to these other materials. As such, the titanium nitride structures can be removed (partially or completely) without significant damage to these other structures. In some embodiments, the etching rate of titanium nitride is at least about 200 Angstroms per minute and even at least about 350 Angstroms per minute, while the etching rate of aluminum and/or other materials is less than 15 Angstroms per minute. An etching solution may be kept at 40° C. to 65° C. and may include ammonium hydroxide and hydrogen peroxide (between 1:600 and 1:3,000 by weight).

    Abstract translation: 提供了用于处理具有氮化钛（TiN）结构以及铝（Al）结构的半导体衬底的方法，并且在一些实施例中，诸如硅锗（SiGe），氮化钽（TaN），氧化铪（HfO x） ，氮化硅（SiN）和/或氧化硅（SiO 2）结构。 本文所述的蚀刻溶液和加工条件提供相对于这些其它材料的氮化钛的高蚀刻选择性。 因此，氮化钛结构可以被部分地或完全地去除而不会对这些其它结构造成显着的损害。 在一些实施例中，氮化钛的蚀刻速率为每分钟至少约200埃，甚至每分钟至少约350埃，而铝和/或其它材料的蚀刻速率小于每分钟15埃。 蚀刻溶液可以保持在40℃至65℃，并且可包括氢氧化铵和过氧化氢（重量比在1:600至1: 3,000之间）。

    Selective Etching of Titanium Nitride
    9.
    发明申请
    Selective Etching of Titanium Nitride 有权
    氮化钛选择性蚀刻

    公开(公告)号：US20140363981A1

    公开(公告)日：2014-12-11

    申请号：US13913672

    申请日：2013-06-10

    Applicant: Intermolecular Inc.

    Inventor： Gregory Nowling

    IPC: H01L21/3213

    CPC classification number: H01L21/32134

    Abstract: Provided are methods for processing semiconductor substrates having titanium nitride (TiN) structures as well as aluminum (Al) structures and, in some embodiments, other structures, such as silicon germanium (SiGe), tantalum nitride (TaN), hafnium oxide (HfOx), silicon nitride (SiN), and/or silicon oxide (SiO2) structures. Etching solutions and processing conditions described herein provide high etching selectivity of titanium nitride relative to these other materials. As such, the titanium nitride structures can be removed (partially or completely) without significant damage to these other structures. In some embodiments, the etching rate of titanium nitride is at least about 200 Angstroms per minute and even at least about 350 Angstroms per minute, while the etching rate of aluminum and/or other materials is less than 15 Angstroms per minute. An etching solution may be kept at 40° C. to 65° C. and may include ammonium hydroxide and hydrogen peroxide (between 1:600 and 1:3,000 by weight).

    Abstract translation: 提供了用于处理具有氮化钛（TiN）结构以及铝（Al）结构的半导体衬底的方法，并且在一些实施例中，诸如硅锗（SiGe），氮化钽（TaN），氧化铪（HfO x） ，氮化硅（SiN）和/或氧化硅（SiO 2）结构。 本文所述的蚀刻溶液和加工条件提供相对于这些其它材料的氮化钛的高蚀刻选择性。 因此，氮化钛结构可以被部分地或完全地去除而不会对这些其它结构造成显着的损害。 在一些实施例中，氮化钛的蚀刻速率为每分钟至少约200埃，甚至每分钟至少约350埃，而铝和/或其它材料的蚀刻速率小于每分钟15埃。 蚀刻溶液可以保持在40℃至65℃，并且可包括氢氧化铵和过氧化氢（重量比在1:600至1: 3,000之间）。

    Polycrystalline-silicon etch with low-peroxide apm
    10.
    发明申请
    Polycrystalline-silicon etch with low-peroxide apm 审中-公开
    多晶硅蚀刻与低过氧化物apm

    公开(公告)号：US20140273467A1

    公开(公告)日：2014-09-18

    申请号：US13804438

    申请日：2013-03-14

    Applicant: INTERMOLECULAR INC.

    Inventor： Gregory Nowling

    IPC: H01L21/3213 ,  C09K13/00 ,  H01L21/311

    CPC classification number: H01L21/32134 ,  C09K13/00 ,  C09K13/08 ,  H01L29/66545

    Abstract: Polycrystalline silicon (poly-Si) can be thoroughly removed without significant effect on adjacent oxides by an aqueous solution of ammonium hydroxide with smaller concentrations of hydrogen peroxide than are normally used in ammonia-peroxide mixture (APM) formulations used for cleaning. The etching selectivity of poly-Si relative to oxides can be widely tuned by varying the hydrogen-peroxide concentration. Compared to other formulations used to remove poly-Si dummy gates in logic-node fabrication, such as TMAH, these aqueous solutions are less hazardous to workers and the environment.

    Abstract translation: 通过与通常用于清洁的氨过氧化物混合物（APM）配方中通常使用的过氧化氢浓度较低的氢氧化铵水溶液，可以彻底除去多晶硅（poly-Si），而不会对邻近的氧化物产生显着的影响。 可以通过改变过氧化氢浓度来广泛调节多晶硅相对于氧化物的蚀刻选择性。 与用于在逻辑节点制造（如TMAH）中去除多晶硅虚拟栅极的其他配方相比，这些水溶液对工人和环境的危害较小。

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