公开(公告)号：US20210111161A1

公开(公告)日：2021-04-15

申请号：US17107710

申请日：2020-11-30

Applicant: Invensas Corporation

Inventor： Stephen MOREIN

IPC: H01L25/065 ,  H01L29/08 ,  H01L23/528 ,  H01L29/45 ,  H01L21/8234 ,  H01L25/00 ,  H01L21/02 ,  H01L29/66 ,  H01L21/768 ,  H01L21/321 ,  H01L27/105

Abstract: Techniques are disclosed herein for creating metal BLs in stacked wafer memory. Using techniques described herein, metal BLs are created on a bottom surface of a wafer. The metal BLs can be created using different processes. In some configurations, a salicide process is utilized. In other configurations, a damascene process is utilized. Using metal reduces the resistance of the BLs as compared to using non-metal diffused BLs. In some configurations, wafers are stacked and bonded together to form three-dimensional memory structures.