公开(公告)号：US6156221A

公开(公告)日：2000-12-05

申请号：US165957

申请日：1998-10-02

申请人： John M. Lauffer ,  Kathleen L. Covert, deceased ,  Peter A. Moschak

发明人： John M. Lauffer ,  Kathleen L. Covert, deceased ,  Peter A. Moschak

IPC分类号： C23F1/18 ,  H05K3/06 ,  B44C1/22 ,  C09K13/00

CPC分类号： C23F1/18 ,  H05K3/067 ,  Y10S428/901 ,  Y10T428/24917

摘要： The present invention is a persulfate etchant composition especially useful for dissolving copper during fabrication of microelectronic packages. The etchant is characterized by its ability to selectively etch copper in the presence of nickel, nickel-phosphorous and noble metal alloys therefrom. Furthermore, no deleterious galvanic etching occurs in this etchant-substrate system so that substantially no undercutting of the copper occurs. The combination of high selectivity and no undercutting allows for a simplification of the microelectronic fabrication process and significant improvements in the design features of the microelectronic package, in particular higher density circuits. The persulfate etchant composition is stabilized with acid and phosphate salts to provide a process that is stable, fast acting, environmentally acceptable, has high capacity, and can be performed at room temperature. A preferred etchant composition is 230 gm/liter sodium persulfate, 3 volume % phosphoric acid and 0.058 molar sodium phosphate dibasic.

摘要翻译： 本发明是在制造微电子封装期间特别可用于溶解铜的过硫酸盐蚀刻剂组合物。 蚀刻剂的特征在于其能够在镍，镍 - 磷和贵金属合金存在下选择性地蚀刻铜。 此外，在该蚀刻剂 - 衬底系统中不发生有害的电镀蚀刻，使得基本上不会发生铜的底切。 高选择性和无底切的组合允许微电子制造工艺的简化和微电子封装，特别是较高密度电路的设计特征的显着改进。 过硫酸盐蚀刻剂组合物用酸和磷酸盐稳定，以提供稳定，快速作用，环境可接受，具有高容量的方法，并且可以在室温下进行。 优选的蚀刻剂组合物为230gm / l过硫酸钠，3体积％磷酸和0.058摩尔磷酸氢二钠。