公开(公告)号：US20200176605A1

公开(公告)日：2020-06-04

申请号：US16624151

申请日：2018-06-15

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Fwzah Hamud ALSHAMMARI ,  Husam Niman ALSHAREEF

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, a gate arranged on the substrate, a dielectric arranged on the gate, a channel arranged on the dielectric, a source electrically coupled to the channel, and a drain electrically coupled to the channel. Each of the gate, dielectric, channel, source, and drain includes a corresponding mixture of hafnium dioxide (HfCte) and zinc oxide (ZnO) layers and at least two of the gate, dielectric, channel, source, and drain comprise different mixtures of the hafnium dioxide and zinc oxide layers.