OSMOTIC ENERGY CONVERSION WITH MXENE LAMELLAR MEMBRANE-BASED SYSTEM AND METHOD

    公开(公告)号:US20210175789A1

    公开(公告)日:2021-06-10

    申请号:US16702737

    申请日:2019-12-04

    Abstract: An osmotic energy conversion system includes a housing having a first inlet and a second inlet, an MXene lamellar membrane located inside the housing and configured to divide the housing into a first chamber and a second chamber, and first and second electrodes placed in the first and second chambers, respectively, and configured to collect electrical energy generated by a salinity-gradient formed by first and second liquids across the MXene lamellar membrane. The first chamber is configured to receive the first liquid at the first inlet and the second chamber is configured to receive the second liquid at the second inlet. The first liquid has a salinity lower than the second liquid, and the MXene lamellar membrane includes plural nanosheets of MXene stacked on top of each other.

    EPITAXIAL PROCESSING OF SINGLE-CRYSTALLINE FILMS ON AMORPHOUS SUBSTRATES

    公开(公告)号:US20240021750A1

    公开(公告)日:2024-01-18

    申请号:US17909807

    申请日:2021-03-03

    CPC classification number: H01L33/007 H01L33/04 H01L33/32

    Abstract: There is a method for making a high-performance opto-electronic device on an amorphous substrate. The method includes growing on a single-crystal substrate, a single-crystal, oxide film; applying a first chemical processing to the single-crystal, oxide film to obtain a first transferrable, single-crystal, chalcogenide film; transferring the transferrable, single crystal, chalcogenide film from the single-crystal substrate to an amorphous substrate or polycrystalline metal substrate; applying a second chemical processing to the transferrable, single-crystal, chalcogenide film to obtain a single-crystal, non-oxide film, wherein the single-crystal, non-oxide film is different from the transferrable, single-crystal, chalcogenide film; and growing a wide-bandgap semiconductor film using the single-crystal, non-oxide film as a seeding layer to obtain the opto-electronic device on the amorphous glass or polycrystalline metal substrate. The first chemical processing is different from the second chemical processing.

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