公开(公告)号：US08830464B2

公开(公告)日：2014-09-09

申请号：US13669804

申请日：2012-11-06

Applicant: KLA-Tencor Corporation

Inventor： David Feiler ,  Kurt Haller

IPC: G01J4/00 ,  G01N21/00

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422

Abstract: The present disclosure is directed to a method for inspecting a wafer, the wafer including a film deposited on a surface of the wafer. The film may have a thickness that varies over the surface of the wafer. The method includes the step of measuring the thickness, refractive index, and extinction coefficient of the film across the surface of the wafer. With this data a film curve is created in real time. The method also includes the step of determining a size of a defect on the surface based on at least the film curve.

Abstract translation: 本公开涉及一种用于检查晶片的方法，所述晶片包括沉积在晶片的表面上的膜。 膜可以具有在晶片的表面上变化的厚度。 该方法包括测量薄膜跨越晶片表面的厚度，折射率和消光系数的步骤。 使用这些数据，实时创建一个电影曲线。 该方法还包括基于至少薄膜曲线确定表面上的缺陷尺寸的步骤。

公开(公告)号：US20140125978A1

公开(公告)日：2014-05-08

申请号：US13669804

申请日：2012-11-06

Applicant: KLA-Tencor Corporation

Inventor： David Feiler ,  Kurt Haller

IPC: G01N21/956 ,  G01N21/21

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422

Abstract: The present disclosure is directed to a method for inspecting a wafer, the wafer including a film deposited on a surface of the wafer. The film may have a thickness that varies over the surface of the wafer. The method includes the step of measuring the thickness, refractive index, and extinction coefficient of the film across the surface of the wafer. With this data a film curve is created in real time. The method also includes the step of determining a size of a defect on the surface based on at least the film curve.

Abstract translation: 本公开涉及一种用于检查晶片的方法，所述晶片包括沉积在晶片的表面上的膜。 膜可以具有在晶片的表面上变化的厚度。 该方法包括测量薄膜跨越晶片表面的厚度，折射率和消光系数的步骤。 使用这些数据，实时创建一个电影曲线。 该方法还包括基于至少薄膜曲线确定表面上的缺陷尺寸的步骤。