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1.发明授权Film thickness, refractive index, and extinction coefficient determination for film curve creation and defect sizing in real time 有权膜厚度，折射率和消光系数确定用于薄膜曲线创建和缺陷尺寸实时测量公开(公告)号：US08830464B2
公开(公告)日：2014-09-09
申请号：US13669804
申请日：2012-11-06
Applicant: KLA-Tencor Corporation
Inventor： David Feiler , Kurt Haller
CPC classification number: G01N21/9501 , G01N21/211 , G01N21/8422
Abstract: The present disclosure is directed to a method for inspecting a wafer, the wafer including a film deposited on a surface of the wafer. The film may have a thickness that varies over the surface of the wafer. The method includes the step of measuring the thickness, refractive index, and extinction coefficient of the film across the surface of the wafer. With this data a film curve is created in real time. The method also includes the step of determining a size of a defect on the surface based on at least the film curve.
Abstract translation: 本公开涉及一种用于检查晶片的方法，所述晶片包括沉积在晶片的表面上的膜。 膜可以具有在晶片的表面上变化的厚度。 该方法包括测量薄膜跨越晶片表面的厚度，折射率和消光系数的步骤。 使用这些数据，实时创建一个电影曲线。 该方法还包括基于至少薄膜曲线确定表面上的缺陷尺寸的步骤。
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2.发明申请Film Thickness, Refractive Index, and Extinction Coefficient Determination for Film Curve Creation and Defect Sizing in Real Time 有权薄膜厚度，折射率和消光系数确定用于电影曲线创建和实时缺陷尺寸公开(公告)号：US20140125978A1
公开(公告)日：2014-05-08
申请号：US13669804
申请日：2012-11-06
Applicant: KLA-Tencor Corporation
Inventor： David Feiler , Kurt Haller
IPC: G01N21/956 , G01N21/21
CPC classification number: G01N21/9501 , G01N21/211 , G01N21/8422
Abstract: The present disclosure is directed to a method for inspecting a wafer, the wafer including a film deposited on a surface of the wafer. The film may have a thickness that varies over the surface of the wafer. The method includes the step of measuring the thickness, refractive index, and extinction coefficient of the film across the surface of the wafer. With this data a film curve is created in real time. The method also includes the step of determining a size of a defect on the surface based on at least the film curve.
Abstract translation: 本公开涉及一种用于检查晶片的方法，所述晶片包括沉积在晶片的表面上的膜。 膜可以具有在晶片的表面上变化的厚度。 该方法包括测量薄膜跨越晶片表面的厚度，折射率和消光系数的步骤。 使用这些数据，实时创建一个电影曲线。 该方法还包括基于至少薄膜曲线确定表面上的缺陷尺寸的步骤。
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公开(公告)号：US09970873B1
公开(公告)日：2018-05-15
申请号：US14939959
申请日：2015-11-12
Applicant: KLA-Tencor Corporation
Inventor： Donald Pettibone , Chuanyong Huang , Kurt Haller
CPC classification number: G01N21/643 , G01N21/9501 , G01N2021/6439
Abstract: A luminescent tag based defect detection system comprises a luminescent tag attachment assembly, an illumination source, one or more detectors, and a set of optical elements. The luminescent tag attachment assembly exposes a sample to one or more luminescent tag materials selectively attached to one or more defects on the sample. The illumination source generates illumination including one or more wavelengths corresponding to the one or more absorption spectra associated with the one or more luminescent tags. At least a portion of the set of optical elements directs illumination from the illumination source to the sample, and at least a portion of the set of optical elements directs illumination emitted from the one or more luminescent tag materials to the one or more detectors. A luminescent tag based defect detection system may also include a luminescent tag removal assembly to remove the luminescent tags after detection.
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