公开(公告)号：US09953867B2

公开(公告)日：2018-04-24

申请号：US14781115

申请日：2014-03-24

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Young Sik Song ,  Tae Hong Yim

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/2855 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76898 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are a method of forming a seed layer on a high-aspect ratio via and a semiconductor device having a high-aspect ratio via formed thereby. Thus, efficient Cu filling-plating is possible, and plating adhesion of the seed layer to filling-plated Cu can be simply and profitably enhanced, thus imparting high durability upon forming metal wiring for electronic components. Moreover, stress of the seed layer can be lowered, thereby enhancing plating adhesion.