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公开(公告)号：US09478961B2
公开(公告)日：2016-10-25
申请号：US14371577
申请日：2013-05-28
Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
Inventor： Young Sik Song
CPC classification number: C23C14/165 , C23C14/022 , C23C14/025 , C23C14/5806 , H01B1/02 , H02G5/00
Abstract: The present invention related to an iron bus bar coated with copper and a method of manufacturing the same. The present invention provides an iron bus bar including an iron core and a copper layer applied on the iron core, and a method of manufacturing the same. According to the present invention, an iron bus bar having high strength and durability as well as excellent electrical conductivity can be manufactured at low cost.
Abstract translation: 本发明涉及一种镀铜铜铁母线及其制造方法。 本发明提供一种铁母线及其制造方法，该铁母线包括铁心和铜层。 根据本发明，可以以低成本制造具有高强度和耐久性以及优异导电性的铁母线。
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公开(公告)号：US20140352999A1
公开(公告)日：2014-12-04
申请号：US14371577
申请日：2013-05-28
Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
Inventor： Young Sik Song
CPC classification number: C23C14/165 , C23C14/022 , C23C14/025 , C23C14/5806 , H01B1/02 , H02G5/00
Abstract: The present invention related to an iron bus bar coated with copper and a method of manufacturing the same. The present invention provides an iron bus bar including an iron core and a copper layer applied on the iron core, and a method of manufacturing the same. According to the present invention, an iron bus bar having high strength and durability as well as excellent electrical conductivity can be manufactured at low cost.
Abstract translation: 本发明涉及一种镀铜铜铁母线及其制造方法。 本发明提供一种铁母线及其制造方法，该铁母线包括铁心和铜层。 根据本发明，可以以低成本制造具有高强度和耐久性以及优异导电性的铁母线。
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Patent Agency Ranking
公开(公告)号：US09637815B2
公开(公告)日：2017-05-02
申请号：US14431645
申请日：2013-09-26
Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
Inventor： Young Sik Song
CPC classification number: C23C14/04 , C23C14/08 , C23C14/12 , C23C14/165 , C23C14/185 , C23C14/345 , Y10T428/24612
Abstract: This invention relates to a method of forming a fine pattern, and more particularly, to a method of forming a fine pattern using only sputtering, which enables the fine pattern to be simply formed at low cost, thus exhibiting superior productivity and economic benefits.
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4.发明申请METHOD FOR FORMING SEED LAYER ON HIGH-ASPECT RATIO VIA AND SEMICONDUCTOR DEVICE HAVING HIGH-ASPECT RATIO VIA FORMED THEREBY 有权通过形成高比例比例的高比例比例的半导体器件形成种子层的方法公开(公告)号：US20160035620A1
公开(公告)日：2016-02-04
申请号：US14781115
申请日：2014-03-24
Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
Inventor： Young Sik Song , Tae Hong YIM
IPC: H01L21/768 , H01L23/532 , H01L23/522
CPC classification number: H01L21/76843 , H01L21/2855 , H01L21/76873 , H01L21/76874 , H01L21/76898 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed are a method of forming a seed layer on a high-aspect ratio via and a semiconductor device having a high-aspect ratio via formed thereby. Thus, efficient Cu filling-plating is possible, and plating adhesion of the seed layer to filling-plated Cu can be simply and profitably enhanced, thus imparting high durability upon forming metal wiring for electronic components. Moreover, stress of the seed layer can be lowered, thereby enhancing plating adhesion.
Abstract translation: 公开了一种以高纵横比通孔形成种子层的方法和由此形成的具有高纵横比的通孔的半导体器件。 因此，可以有效地进行Cu填充，并且可以简单且有利地增强种子层对填充Cu的电镀附着力，从而在形成用于电子部件的金属布线时赋予高耐久性。 此外，可以降低种子层的应力，从而增强电镀附着力。
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公开(公告)号：US10465275B2
公开(公告)日：2019-11-05
申请号：US15291236
申请日：2016-10-12
Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
Inventor： Young Sik Song
Abstract: A method of manufacturing an iron bus bar includes preparing an iron core and forming a copper layer having a thickness of 10 to 30 μm on the iron core by coating. The manufactured iron bus bar has high strength and durability as well as excellent electrical conductivity can be manufactured at low cost.
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公开(公告)号：US09953867B2
公开(公告)日：2018-04-24
申请号：US14781115
申请日：2014-03-24
Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
Inventor： Young Sik Song , Tae Hong Yim
IPC: H01L21/768 , H01L21/285 , H01L23/522 , H01L23/532
CPC classification number: H01L21/76843 , H01L21/2855 , H01L21/76873 , H01L21/76874 , H01L21/76898 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed are a method of forming a seed layer on a high-aspect ratio via and a semiconductor device having a high-aspect ratio via formed thereby. Thus, efficient Cu filling-plating is possible, and plating adhesion of the seed layer to filling-plated Cu can be simply and profitably enhanced, thus imparting high durability upon forming metal wiring for electronic components. Moreover, stress of the seed layer can be lowered, thereby enhancing plating adhesion.
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公开(公告)号：US20150259778A1
公开(公告)日：2015-09-17
申请号：US14431645
申请日：2013-09-26
Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
Inventor： Young Sik Song
CPC classification number: C23C14/04 , C23C14/08 , C23C14/12 , C23C14/165 , C23C14/185 , C23C14/345 , Y10T428/24612
Abstract: This invention relates to a method of forming a fine pattern, and more particularly, to a method of forming a fine pattern using only sputtering, which enables the fine pattern to be simply formed at low cost, thus exhibiting superior productivity and economic benefits.
Abstract translation: 本发明涉及一种形成精细图案的方法，更具体地说，涉及一种使用溅射形成精细图案的方法，这使得能够以低成本简单地形成精细图案，从而表现出优异的生产率和经济效益。
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