公开(公告)号：US20240200185A1

公开(公告)日：2024-06-20

申请号：US18501259

申请日：2023-11-03

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  Inha University Research and Business Foundation

Inventor： Hyung-jun KIM ,  Rino CHOI ,  Seung-Hwan KIM ,  Daeyoon BAEK

IPC: C23C14/34

CPC classification number: C23C14/3414

Abstract: Provided is a method for manufacturing a multilayer structure. The method for manufacturing the multilayer structure includes providing a substrate in a chamber, providing a target in the chamber, and allowing a target material to be incident into the substrate so as to form a material layer. The target includes magnesium oxide or beryllium oxide. An incident angle of the target material to the substrate is about 9.14° or less.

公开(公告)号：US20230142462A1

公开(公告)日：2023-05-11

申请号：US17972912

申请日：2022-10-25

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyung-jun KIM ,  Seunghwan KIM ,  Daeyoon BAEK

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L29/04

CPC classification number: H01L29/1033 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/045

Abstract: Embodiments relate to a semiconductor device including a trench with undercut structure including a substrate made of a first material; an insulation layer formed on an upper surface of the substrate; at least one trench penetrating the insulation layer toward the substrate; and at least one seed layer formed in the trench, the seed layer made of a second material which is different from the first material, and a method for manufacturing the same.