公开(公告)号：US20160005882A1

公开(公告)日：2016-01-07

申请号：US14698627

申请日：2015-04-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Euipil KWON

IPC: H01L29/792 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7836 ,  G11C17/16 ,  H01L27/11206 ,  H01L27/2463 ,  H01L29/0649 ,  H01L29/78 ,  H01L29/8611 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1675

Abstract: Disclosed is a nonvolatile memory device including a memory cell having a transistor in which a structure is formed to be programmable and a method of fabricating the memory device. The memory cell includes one transistor serving as a basic structure, a gate insulating layer is formed of an insulating layer or a variable resistor, and a channel region includes a diode region, a source-drain connecting region, or an insulating isolation layer. The diode region, source-drain connecting region, or insulating isolation layer is formed in a region including a channel region between the source and drain regions in the semiconductor substrate. The gate includes a conductive layer, and the gate insulating layer includes an insulating layer or a variable resistor, a portion of the gate insulating layer between the gate and the diode region serves as a storage layer.

Abstract translation: 公开了一种非易失性存储器件，包括具有其中形成可编程结构的晶体管的存储单元和制造存储器件的方法。 存储单元包括一个用作基本结构的晶体管，栅极绝缘层由绝缘层或可变电阻器形成，沟道区域包括二极管区域，源极 - 漏极连接区域或绝缘隔离层。 二极管区域，源极 - 漏极连接区域或绝缘隔离层形成在包括半导体衬底中的源极和漏极区域之间的沟道区域的区域中。 栅极包括导电层，并且栅极绝缘层包括绝缘层或可变电阻器，栅极和二极管区域之间的栅极绝缘层的一部分用作存储层。