公开(公告)号：US10662511B2

公开(公告)日：2020-05-26

申请号：US15563468

申请日：2015-06-30

Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTE

Inventor： Seung-Jae Lee ,  Sung-Chul Choi ,  Jong-Hyeob Baek ,  Seong-Ran Jeon ,  Sang-Mook Kim ,  Tae Hoon Chung

IPC: H01L33/32 ,  H01L33/00 ,  C22C38/04 ,  H01L33/22

Abstract: A nitride semiconductor light-emitting device comprises a substrate; a first conductivity type semiconductor layer formed on the substrate; a high-resistance semiconductor layer formed on the first conductivity type semiconductor layer; an active layer formed on the high-resistance semiconductor layer and having multiple quantum wells; and a second conductivity type semiconductor layer formed on the active layer. A first v-pit structure is formed between the high-resistance semiconductor layer and the first conductivity type semiconductor layer, and a second v-pit structure is formed between the active layer and the second conductivity type semiconductor layer. The second v-pit structure is formed such that a lowest part of the second conductivity type semiconductor layer contacts a lowest quantum well of the multiple quantum wells of the active layer through the second v-pit structure.