公开(公告)号：US09000414B2

公开(公告)日：2015-04-07

申请号：US13679698

申请日：2012-11-16

Applicant: Korea Photonics Technology Institute

Inventor： Sang-Mook Kim ,  Jong-Hyeob Baek

IPC: H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/22 ,  H01L33/00 ,  H01L33/22 ,  H01L33/24

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/24

Abstract: An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to outside is improved by forming depressions and prominences configured of heterogeneous materials different from each other before or in the middle of forming a semiconductor material on a substrate in order to improve the light extraction efficiency.

Abstract translation: 本发明的目的是提供一种具有不均匀材料结构的发光二极管及其制造方法，其中通过在之前或之后形成由彼此不同的异质材料构成的凹陷和突出物来改善向外部提取光的效率， 在衬底上形成半导体材料的中间，以提高光提取效率。

公开(公告)号：US10662511B2

公开(公告)日：2020-05-26

申请号：US15563468

申请日：2015-06-30

Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTE

Inventor： Seung-Jae Lee ,  Sung-Chul Choi ,  Jong-Hyeob Baek ,  Seong-Ran Jeon ,  Sang-Mook Kim ,  Tae Hoon Chung

IPC: H01L33/32 ,  H01L33/00 ,  C22C38/04 ,  H01L33/22

Abstract: A nitride semiconductor light-emitting device comprises a substrate; a first conductivity type semiconductor layer formed on the substrate; a high-resistance semiconductor layer formed on the first conductivity type semiconductor layer; an active layer formed on the high-resistance semiconductor layer and having multiple quantum wells; and a second conductivity type semiconductor layer formed on the active layer. A first v-pit structure is formed between the high-resistance semiconductor layer and the first conductivity type semiconductor layer, and a second v-pit structure is formed between the active layer and the second conductivity type semiconductor layer. The second v-pit structure is formed such that a lowest part of the second conductivity type semiconductor layer contacts a lowest quantum well of the multiple quantum wells of the active layer through the second v-pit structure.