公开(公告)号：US5184008A

公开(公告)日：1993-02-02

申请号：US772911

申请日：1991-10-10

申请人： Keiichi Saito ,  Shigeharu Kawamura ,  Syozo Sato ,  Kiyohito Kawasumi

发明人： Keiichi Saito ,  Shigeharu Kawamura ,  Syozo Sato ,  Kiyohito Kawasumi

IPC分类号： H01J31/50

CPC分类号： H01J31/501

摘要： An X-ray imaging tube comprising an vacuum envelope, and input screen located in the input end of the envelope, an output screen located in the output end of the envelope, an anode located in the output end of the envelope, and a plurality of beam-converging electrodes located in the envelope and arranged along the inner surface of the envelope. The tube has an magnification of used input field size of 2.3 or more. The components of the tube have such positions and sizes, thus satisfying the following relations:3.5.ltoreq.G3.sub.D /A.sub.D .ltoreq.5.0-3.65.times.MAG+1.00.ltoreq.G3.sub.L /L.ltoreq.-3.65.times.MAG+1.05where L is the distance between the input and output screens, A.sub.D is the inside diameter of the anode or one of the beam-converging electrodes set at the same potential as the anode, which is closer to the input screen than any other beam-converging electrodes set at the same potential as the anode, G3.sub.D is the inside diameter of one of beam-converging electrodes set at potential of at least 2 KV, which is closer to the input screen than any other electrode set at potential of at least 2 KV, G3.sub.L is the distance between the input screen and the electrode set at least 2 KV and located closer to the input screen than any other electrode set at least 2 KV, and MAG is the image-reducing ratio of the X-ray imaging tube.

公开(公告)号：US4168630A

公开(公告)日：1979-09-25

申请号：US853869

申请日：1977-11-22

申请人： Shunji Shirouzu ,  Susumu Kimijima ,  Syozo Sato

发明人： Shunji Shirouzu ,  Susumu Kimijima ,  Syozo Sato

IPC分类号： G01L9/04 ,  G01L9/00 ,  H01L29/84 ,  H01L45/00 ,  G01L9/06

CPC分类号： G01L19/0084 ,  G01L19/147

摘要： A semiconductor pressure converter includes a silicon pressure sensing element, a silicon base hermetically attached to the sensing element to bear the element and a metal pipe connected to the silicon base so as to introduce a pressure to the sensing element through the silicon base.

摘要翻译： 半导体压力转换器包括硅压力感测元件，密封地连接到感测元件以承载元件的硅基底和连接到硅基底的金属管，以通过硅基底向感测元件引入压力。

公开(公告)号：US4906893A

公开(公告)日：1990-03-06

申请号：US286865

申请日：1988-12-20

申请人： Katsuhisa Homma ,  Sakae Kimura ,  Masaru Nikaido ,  Yoshiaki Ouchi ,  Yoshiharu Obata ,  Yoshikazu Uemura ,  Syozo Sato

发明人： Katsuhisa Homma ,  Sakae Kimura ,  Masaru Nikaido ,  Yoshiaki Ouchi ,  Yoshiharu Obata ,  Yoshikazu Uemura ,  Syozo Sato

IPC分类号： H01J9/22 ,  C09K11/58 ,  C09K11/61 ,  C09K11/64 ,  G21K4/00 ,  H01J29/18 ,  H01J31/50

CPC分类号： G21K4/00 ,  C09K11/584 ,  C09K11/612 ,  C09K11/642

摘要： An output phosphor film used in an output screen of an image intensifier is made of ZnS or (Zn, Cd)S host material and at least one activator element selected from the group consisting of Cu, Ag, Au, Al, and Cl. The phosphor film is formed on a face plate by means of chemical vapor-deposition, or physical vapor deposition in an inert-gas atmosphere having a pressure of 1 Pa or more, and is heat-treated. The formed phosphor film has hexagonal (Wurtzite-type) crystal and/or cubic (sphalerite-type) crystal structure. These crystals are orientated such that the (002) planes of the hexagonal crystals and/or the (111) planes of the cubic crystals are substantially parallel to the face plate.