公开(公告)号：US20230387317A1

公开(公告)日：2023-11-30

申请号：US18178464

申请日：2023-03-03

Applicant: Kioxia Corporation

Inventor： Ken SHIMOMORI ,  Takuya KIKUCHI ,  Ryosuke YAMAMOTO

IPC: H01L29/786 ,  H10B12/00

CPC classification number: H01L29/7869 ,  H10B12/30

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, an oxide semiconductor layer provided between the first electrode and the second electrode, a gate electrode surrounding the oxide semiconductor layer, a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and separated from the first electrode, a first insulating layer provided between the first electrode and the gate electrode. The gate insulating layer is between first insulating layer and the oxide semiconductor layer, and a second insulating layer is provided between the first electrode and the first insulating layer. The second insulating layer has a chemical composition or density that is different from that of the first insulating layer.

公开(公告)号：US20240324180A1

公开(公告)日：2024-09-26

申请号：US18609019

申请日：2024-03-19

Applicant: Kioxia Corporation

Inventor： Ken SHIMOMORI ,  Takuya KIKUCHI ,  Ryosuke YAMAMOTO

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the electrodes; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer between the gate electrode and the oxide semiconductor layer and spaced from the first electrode; a first insulating layer between the first electrode and the gate electrode, the gate insulating layer between the first insulating layer and the oxide semiconductor layer; and an intermediate layer between the first electrode and the first insulating layer, including a first region and a second region between the first region and the first insulating layer. The first region contains a first metal element and oxygen, the second region contains a second metal element, and an oxygen concentration in the second region is lower than that in the first region.

公开(公告)号：US20240008257A1

公开(公告)日：2024-01-04

申请号：US18180792

申请日：2023-03-08

Applicant: Kioxia Corporation

Inventor： Takuya KIKUCHI ,  Masanori MIZUKOSHI ,  Ken SHIMOMORI

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: A semiconductor device includes: a first and a second insulating layer; a first conductive layer; an oxide semiconductor layer; and a third insulating layer disposed between the first insulating layer, the second insulating layer, and the first conductive layer; and the oxide semiconductor layer. The third insulating layer includes: a first part that covers a part of a side surface of the first insulating layer; and a second part that covers a part of side surfaces of the second insulating layer and the first conductive layer. A region extending in a direction different from an extending direction of the first and the second part is disposed. The region is disposed between a region corresponding to the first part and a region corresponding to the second part in a contact surface between the third insulating layer and the oxide semiconductor layer.