公开(公告)号：US20220221792A1

公开(公告)日：2022-07-14

申请号：US17707720

申请日：2022-03-29

Applicant: Kioxia Corporation

Inventor： Ryosuke YAMAMOTO ,  Seiji MORITA ,  Norikatsu SASAO ,  Koji ASAKAWA ,  Tomoaki SAWABE ,  Shinobu SUGIMURA

IPC: G03F7/09 ,  C08F220/08 ,  C08F212/08 ,  C08F120/08 ,  G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  C08F120/28 ,  G03F7/40 ,  H01L21/033 ,  H01L21/311 ,  C08F220/28

Abstract: A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.

公开(公告)号：US20210296117A1

公开(公告)日：2021-09-23

申请号：US17010021

申请日：2020-09-02

Applicant: Kioxia Corporation

Inventor： Ryosuke YAMAMOTO ,  Koji ASAKAWA ,  Ayaka SUKO

IPC: H01L21/027 ,  H01L21/02 ,  G03F7/00

Abstract: A pattern formation method includes forming an organic film on a substrate, processing the organic film to form an organic film pattern, exposing the organic film pattern to an organic gas, and exposing the organic film pattern to a metal-containing gas, and after (i) exposing the organic film pattern to the organic gas and (ii) exposing the organic film pattern to the metal-containing gas, treating the organic film pattern with an oxidizing agent.

公开(公告)号：US20230089206A1

公开(公告)日：2023-03-23

申请号：US17682768

申请日：2022-02-28

Applicant: Kioxia Corporation

Inventor： Norikatsu SASAO ,  Koji ASAKAWA ,  Shinobu SUGIMURA ,  Ryosuke YAMAMOTO

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for manufacturing a metal fluoride-containing organic polymer film includes forming an organic polymer film on a base body. The method includes exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound. The method includes exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film.

公开(公告)号：US20240099009A1

公开(公告)日：2024-03-21

申请号：US18446583

申请日：2023-08-09

Applicant: Kioxia Corporation

Inventor： Mariko SUMIYA ,  Ryosuke YAMAMOTO

IPC: H10B43/35 ,  H01L21/02 ,  H01L21/20 ,  H10B43/27 ,  H10B43/40

CPC classification number: H10B43/35 ,  H01L21/02381 ,  H01L21/2007 ,  H10B43/27 ,  H10B43/40

Abstract: A method for manufacturing a semiconductor device includes: forming a release layer including a first polycrystalline semiconductor layer provided on a first substrate, and a second polycrystalline semiconductor layer provided between the first substrate and the first polycrystalline semiconductor layer and having a p-type impurity concentration which is lower than that of the first polycrystalline semiconductor layer, and an n-type impurity concentration which is higher than that of the first polycrystalline semiconductor layer; subjecting the first polycrystalline semiconductor layer to anodic chemical conversion to form a first porous layer; forming a first device layer on the first porous layer; and bonding together the first device layer and a second device layer provided on a second substrate.

公开(公告)号：US20230387317A1

公开(公告)日：2023-11-30

申请号：US18178464

申请日：2023-03-03

Applicant: Kioxia Corporation

Inventor： Ken SHIMOMORI ,  Takuya KIKUCHI ,  Ryosuke YAMAMOTO

IPC: H01L29/786 ,  H10B12/00

CPC classification number: H01L29/7869 ,  H10B12/30

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, an oxide semiconductor layer provided between the first electrode and the second electrode, a gate electrode surrounding the oxide semiconductor layer, a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and separated from the first electrode, a first insulating layer provided between the first electrode and the gate electrode. The gate insulating layer is between first insulating layer and the oxide semiconductor layer, and a second insulating layer is provided between the first electrode and the first insulating layer. The second insulating layer has a chemical composition or density that is different from that of the first insulating layer.

公开(公告)号：US20240324180A1

公开(公告)日：2024-09-26

申请号：US18609019

申请日：2024-03-19

Applicant: Kioxia Corporation

Inventor： Ken SHIMOMORI ,  Takuya KIKUCHI ,  Ryosuke YAMAMOTO

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the electrodes; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer between the gate electrode and the oxide semiconductor layer and spaced from the first electrode; a first insulating layer between the first electrode and the gate electrode, the gate insulating layer between the first insulating layer and the oxide semiconductor layer; and an intermediate layer between the first electrode and the first insulating layer, including a first region and a second region between the first region and the first insulating layer. The first region contains a first metal element and oxygen, the second region contains a second metal element, and an oxygen concentration in the second region is lower than that in the first region.