公开(公告)号：US20240315036A1

公开(公告)日：2024-09-19

申请号：US18593502

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Shin ISHIMATSU ,  Tatsunori ISOGAI ,  Masaki NOGUCHI ,  Hiroyuki YAMASHITA ,  Wataru MATSUURA ,  Daisuke NISHIDA ,  Junichi KANEYAMA ,  Tomoyuki TAKEMOTO

IPC: H10B43/35 ,  G11C16/04 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  G11C16/0483 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

Abstract: According to one embodiment, a semiconductor memory device includes a stacked film in which a plurality of silicon oxide layers, one of which having a film density of 2.3 g/cm3 or more, and a plurality of conductive layers, are alternately stacked in a first direction, and a memory pillar that penetrates the stacked film in the first direction, wherein a plurality of memory cells is provided in the memory pillar.

公开(公告)号：US20240324227A1

公开(公告)日：2024-09-26

申请号：US18593379

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Hiroyuki YAMASHITA ,  Tatsunori ISOGAI ,  Masaki NOGUCHI ,  Junichi KANEYAMA ,  Shin ISHIMATSU ,  Daisuke NISHIDA ,  Tomoyuki TAKEMOTO ,  Wataru MATSUURA

IPC: H10B43/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B43/27

Abstract: A semiconductor device includes a stack including a conductor layer and an insulator layer, a block insulating layer, a channel layer, a charge storage layer provided between the block insulating layer and the channel layer, and a tunnel layer provided between the charge storage layer and the channel layer, where the charge storage layer includes a first charge storage layer containing Si, N and at least one of Al, Mo, Nb, Hf, Zr, Ti, B, or P, a second charge storage layer containing Si and N, in which Si is contained at a second concentration higher than a first concentration that is a concentration of Si in the first charge storage layer, and provided between the first charge storage layer and the tunnel layer, and a dielectric layer containing at least one of silicon oxynitride (SiON), silicon oxycarbonitride (SiOCN), or aluminum oxide (AlOx), and provided between the first charge storage layer and the second charge storage layer.