公开(公告)号：US11322613B2

公开(公告)日：2022-05-03

申请号：US16896346

申请日：2020-06-09

Applicant: Korea Advanced Institute Of Science And Technology

Inventor： Yang-Kyu Choi ,  Joonkyu Han

IPC: H01L29/78 ,  H01L27/108 ,  H01L29/06 ,  G06N3/04 ,  H01L29/45 ,  G06N3/063 ,  H01L29/08

Abstract: A structure and an operation of a transistor, which is a vertical transistor in which a nanowire-type floating body layer is vertically formed or a horizontal transistor in which a floating body layer is horizontally formed, and implements a spike operation of a neuron by storing and releasing charges inside the transistor, and a neuromorphic system using the same are provided. The vertical transistor includes a floating body layer in a form of a vertical nanowire vertically formed on a substrate, a source and a drain formed above and below the floating body layer, a gate insulating layer formed on the source and surrounding the floating body layer, a gate formed outside the gate insulating layer, and a contact metal being in contact with the source, the drain and the gate to input or output an electrical signal.