公开(公告)号：US09395624B2

公开(公告)日：2016-07-19

申请号：US14296186

申请日：2014-06-04

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Ki-Hun Jeong ,  Youngseop Lee ,  Jae-Beom Kim

IPC: G03F7/004 ,  C08K3/08 ,  H01B1/22 ,  H05K1/09 ,  G03F7/095 ,  G03F7/11

CPC classification number: G03F7/0047 ,  C08K3/08 ,  G03F7/0043 ,  G03F7/095 ,  G03F7/11 ,  H01B1/22 ,  H05K1/095

Abstract: Provided are a meta-photoresist capable of transferring mask patterns on which fine patterns having a diffraction limit or less are formed, on a substrate, and a lithography method using the same, wherein the meta-photoresist contains a photosensitive resin layer and a metal particle layer which is a layer of metal particles arranged so as to be spaced apart from each other.

Abstract translation: 提供了能够在基板上转印具有衍射极限以下的微细图案的掩模图案的光致抗蚀剂以及使用其的光刻方法，其中，所述间位光致抗蚀剂含有感光性树脂层和金属粒子 层，其是以彼此间隔开的方式布置的金属颗粒层。

公开(公告)号：US20150010864A1

公开(公告)日：2015-01-08

申请号：US14296186

申请日：2014-06-04

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Ki-Hun Jeong ,  Youngseop Lee ,  Jae-Beom Kim

IPC: G03F7/004 ,  G03F7/038

CPC classification number: G03F7/0047 ,  C08K3/08 ,  G03F7/0043 ,  G03F7/095 ,  G03F7/11 ,  H01B1/22 ,  H05K1/095

Abstract: Provided are a meta-photoresist capable of transferring mask patterns on which fine patterns having a diffraction limit or less are formed, on a substrate, and a lithography method using the same, wherein the meta-photoresist contains a photosensitive resin layer and a metal particle layer which is a layer of metal particles arranged so as to be spaced apart from each other.

Abstract translation: 提供了能够在基板上转印具有衍射极限以下的微细图案的掩模图案的光致抗蚀剂以及使用其的光刻方法，其中，所述间位光致抗蚀剂含有感光性树脂层和金属粒子 层，其是以彼此间隔开的方式布置的金属颗粒层。