公开(公告)号：US20240295817A1

公开(公告)日：2024-09-05

申请号：US18568264

申请日：2022-06-07

申请人： SHANGHAI MICROSTART PHOTOELECTRIC TECHNOLOGY CO., LTD.

发明人： Yijiao GAO

IPC分类号： G03F7/095 ,  G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC分类号： G03F7/095 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/2022 ,  G03F7/322 ,  G03F7/70383

摘要： The present disclosure pertains to a photolithography method based on bilayer photoresist, the method including applying one layer of positive photoresist on a substrate and drying, then applying one layer of negative photoresist on the positive photoresist and drying; exposing the two layers of photoresist using a photolithography mask with mask patterns or through focused direct write under a source of exposure, and then drying; developing, with developer for negative photoresist, the negative photoresist; controllably developing, with developer for positive photoresist, the positive photoresist; forming patterns on the material of the substrate through material deposition technology or etching technology; removing the photoresist. Compared with existing single-exposure photolithography technology, the method of the present disclosure is simple and a line width smaller than that of the conventional technology can be achieved by pattern contouring. The method can be widely used in semiconductor process and has extensive values of research and application.

公开(公告)号：US11990339B2

公开(公告)日：2024-05-21

申请号：US17391537

申请日：2021-08-02

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jian-Jou Lian ,  Yao-Wen Hsu ,  Neng-Jye Yang ,  Li-Min Chen ,  Chia-Wei Wu ,  Kuan-Lin Chen ,  Kuo Bin Huang

IPC分类号： H01L21/027 ,  G03F7/09 ,  G03F7/20 ,  G03F7/32 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  G03F7/095 ,  H01L21/306

CPC分类号： H01L21/0273 ,  G03F7/094 ,  G03F7/20 ,  G03F7/32 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  G03F7/095 ,  H01L21/30608

摘要： A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

公开(公告)号：US20240134274A1

公开(公告)日：2024-04-25

申请号：US18546879

申请日：2022-01-28

申请人： Lam Research Corporation

发明人： Timothy William Weidman ,  Eric Calvin Hansen ,  Chenghao Wu

IPC分类号： G03F7/004 ,  G03F7/095 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

CPC分类号： G03F7/0043 ,  G03F7/095 ,  G03F7/167 ,  G03F7/2006 ,  G03F7/30 ,  G03F7/36

摘要： The present disclosure relates to a composition formed with a precursor including a C1-4 haloaliphatic or C1-4 aliphatic group or vinyl group (—CH═CH2) and other unsaturated substituents, as well as methods for forming and employing such compositions. In particular embodiments, the haloaliphatic group is a C1-2 haloalkyl group, which in turn provides a resist film having enhanced radiation absorptivity and/or minimal film shrinkage (e.g., upon radiation exposure and/or post-exposure bake). In other embodiments, the aliphatic group is a C1-2 alkyl or vinyl group and other unsaturated substituents, which can be dry deposited. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.

公开(公告)号：US20230324800A1

公开(公告)日：2023-10-12

申请号：US18333933

申请日：2023-06-13

申请人： FUJIFILM Corporation

发明人： Kazuki WATANABE

IPC分类号： G03F7/095 ,  B41C1/10 ,  G03F7/11 ,  G03F7/09 ,  G03F7/027 ,  G03F7/32

CPC分类号： G03F7/095 ,  B41C1/10 ,  G03F7/11 ,  G03F7/091 ,  G03F7/027 ,  G03F7/32

摘要： An object of the present invention is to provide a flexographic printing plate precursor in which a sensitivity of a heat-sensitive image forming layer is high and occurrence of white spots in a line drawing can be suppressed in a case of being used for a flexographic printing plate, and a manufacturing method of a flexographic printing plate using the same. The flexographic printing plate precursor of the present invention is a flexographic printing plate precursor including, in the following order, a support, a photosensitive resin layer, a barrier layer, and a heat-sensitive image forming layer, in which the barrier layer contains a first infrared absorbing dye, the heat-sensitive image forming layer contains an ultraviolet absorber and a second infrared absorbing dye, and in the barrier layer, a content of a compound having substantially no absorption in a wavelength range of 900 to 1200 nm and having an absorption in a wavelength range of 300 to 400 nm is 0% by mass or more and less than 0.1% by mass with respect to a mass of the barrier layer.

公开(公告)号：US20230305402A1

公开(公告)日：2023-09-28

申请号：US18023039

申请日：2021-09-15

申请人： ASAHI KASEI KABUSHIKI KAISHA

发明人： Hiroki AKIYAMA ,  Shinji MIYAMOTO

IPC分类号： G03F7/095 ,  G03F7/039 ,  B41C1/10

CPC分类号： G03F7/095 ,  G03F7/039 ,  B41C1/1033

摘要： A photosensitive resin structure for a flexographic printing plate, containing



(a): a support;
(b): a photosensitive resin composition layer which is located on the support (a) and which contains a thermoplastic elastomer having a copolymer site of a monovinyl-substituted aromatic hydrocarbon and a conjugated diene; and
(c): an infrared ray ablation layer which is laminated on the photosensitive resin composition layer (b) and which comprises a resin and carbon black, is ablatable with an infrared laser, and is a layer shielding a light beam other than infrared ray, wherein
the resin in the infrared ray ablation layer (c) contains a copolymer of a monovinyl-substituted aromatic hydrocarbon and a conjugated diene, or a hydrogenated copolymer of a monovinyl-substituted aromatic hydrocarbon and a conjugated diene, and
a primary particle diameter of the carbon black contained in the infrared ray ablation layer (c) is 13 nm or larger and 25 nm or smaller.

公开(公告)号：US20230197505A1

公开(公告)日：2023-06-22

申请号：US17644932

申请日：2021-12-17

申请人： Tokyo Electron Limited

发明人： Katie Lutker-Lee ,  Angelique Raley ,  Nicholas Joy

IPC分类号： H01L21/768 ,  H01L21/027 ,  G03F7/095 ,  G03F1/22 ,  G03F7/20

CPC分类号： H01L21/76811 ,  H01L21/0274 ,  H01L21/76877 ,  G03F7/095 ,  G03F1/22 ,  G03F7/2004

摘要： A method for patterning a substrate includes: forming a first photoresist etch mask with an extreme ultraviolet (EUV) lithography process, the first photoresist etch mask including first through openings, the first photoresist etch mask including a metal-based photoresist material; forming a second photoresist etch mask over the first photoresist etch mask, the second photoresist etch mask including second through openings; and forming first openings, through the first and the second photoresist etch masks, in a region of the substrate that vertically overlaps both the first through openings and the second through openings.

公开(公告)号：US20190039397A1

公开(公告)日：2019-02-07

申请号：US15755937

申请日：2016-09-02

申请人： Toray Industries, Inc.

发明人： Hiroyuki Kawahara ,  Norihito Tachi ,  Kei Nagano

IPC分类号： B41N1/12 ,  B41C1/02

CPC分类号： B41N1/12 ,  B41C1/025 ,  G03F7/00 ,  G03F7/027 ,  G03F7/037 ,  G03F7/038 ,  G03F7/0388 ,  G03F7/095 ,  G03F7/0955

摘要： A photosensitive resin printing plate precursor includes at least a substrate and a photosensitive resin layer, the photosensitive resin layer containing: (A) a partially saponified polyvinyl acetate, (B) a polyamide having basic nitrogen, (C) a compound having an ethylenic double bond, and (D) a photopolymerization initiator; the photosensitive resin layer including at least an underlayer and a printing surface layer; the substrate, the underlayer, and the printing surface layer being included in this order; and the photosensitive resin layer containing, as the partially saponified polyvinyl acetate (A), those (A1) having an average polymerization degree of 1,200 to 2,600 in the printing surface layer and those (A2) having an average polymerization degree of 400 to 800 in the underlayer.

公开(公告)号：US20190027686A1

公开(公告)日：2019-01-24

申请号：US15864472

申请日：2018-01-08

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Youngdae KIM ,  Sangjin PARK ,  Minjae JEONG

IPC分类号： H01L51/00 ,  H01L51/56 ,  G03F7/039 ,  G03F7/038 ,  G03F7/213 ,  G03F7/26 ,  G03F7/09 ,  G03F7/095 ,  G03F7/20

CPC分类号： H01L51/0011 ,  C23C14/042 ,  G03F7/038 ,  G03F7/039 ,  G03F7/094 ,  G03F7/095 ,  G03F7/0957 ,  G03F7/12 ,  G03F7/2022 ,  G03F7/213 ,  G03F7/26 ,  H01L51/56

摘要： A method of manufacturing a mask includes attaching a first mask base substrate and a second mask base substrate to opposite sides of an adhesive layer, forming a photoresist layer on the first and second mask base substrates, exposing and developing the photoresist layer to remove the photoresist layer on effective area at centers of surfaces of the first and second mask base substrates such that the first photoresist layer remains on non-effective areas at edges of surfaces of the first mask base substrate and the second mask base substrate, etching the effective area to form a stepped groove on the first and second mask base substrates, separating the first and second mask base substrates from the adhesive layer, and forming a pattern hole in the effective area of first and second mask base substrates, each with the first stepped groove thereon.

公开(公告)号：US20180335697A1

公开(公告)日：2018-11-22

申请号：US15597309

申请日：2017-05-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Siao-Shan Wang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC分类号： G03F7/09 ,  H01L21/027 ,  G03F7/42 ,  G03F7/039 ,  G03F7/038 ,  G03F7/16 ,  G03F7/095 ,  G03F7/38 ,  G03F7/20 ,  G03F7/32

CPC分类号： G03F7/094 ,  G03F7/091 ,  G03F7/095 ,  G03F7/11 ,  H01L21/0274

摘要： The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer over a substrate, wherein the material layer is soluble in a solvent; forming a blocking layer on the material layer; and forming a photoresist layer on the blocking layer, wherein the photoresist layer includes a photosensitive material dissolved in the solvent. The method further includes exposing the photoresist layer; and developing the photoresist layer in a developer.

公开(公告)号：US20180144929A1

公开(公告)日：2018-05-24

申请号：US15385884

申请日：2016-12-21

申请人： Peng Liu ,  Qiyan Feng ,  Yu Ren ,  Yukun Lv ,  Jun Zhu ,  Hsusheng Chang

发明人： Peng Liu ,  Qiyan Feng ,  Yu Ren ,  Yukun Lv ,  Jun Zhu ,  Hsusheng Chang

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  G03F7/095

CPC分类号： H01L21/0273 ,  G03F7/095 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31138

摘要： The invention disclosed a method for forming high aspect ratio patterning structure. Firstly, forming a dielectric film ashing stop layer, a first photoresist layer, a first hard mask layer and a second photoresist layer on a semiconductor substrate in turn. A second hard mask layer having a high etch selectivity ratio with the first photoresist layer is formed on top surface and sidewall of the pattern by utilizing a low temperature chemical vapor deposition process, which can be a protect for the pattern sidewall during the later etching process of the first photoresist layer. So, the cone-shaped or the bowling-shaped photoresist morphology caused by plasma bombardment can be avoided. Therefore, the problems of the insufficient of selectivity ratio, burrs at the edge of the pattern and larger critical dimension can be solved, and the implanted ions can be well distributed according to the design of the device.