公开(公告)号：US20210280739A1

公开(公告)日：2021-09-09

申请号：US17182015

申请日：2021-02-22

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghyeon KIM ,  Juhyuk PARK ,  DaeMyeong GEUM

IPC: H01L33/04 ,  H01L33/30 ,  H01L27/15 ,  H01L33/00

Abstract: Various embodiments may provide a highly efficient micro light-emitting diode (LED) in a low current range, a method of fabricating the same, and a display including the same. The micro LED includes a first conductive type semiconductor layer and a second conductive type semiconductor layer and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a single quantum well structure. The single quantum well structure may be formed so that a ratio of a conduction band offset of any one of the first conductive type semiconductor layer or the second conductive type semiconductor layer and a valence band offset of the other of the first conductive type semiconductor layer or the second conductive type semiconductor layer becomes greater than 0 and less than 1.

公开(公告)号：US20210005589A1

公开(公告)日：2021-01-07

申请号：US16913593

申请日：2020-06-26

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghyeon KIM ,  DaeMyeong GEUM

IPC: H01L25/16 ,  H01L33/00 ,  H01L33/62 ,  H01L23/00

Abstract: Disclosed is a micro LED display having a multi-color pixel array and a method of fabricating the same based on integration with a driving circuit thereof. According to various embodiments, the display may be fabricated by providing an IC device in which a driving circuit has been wired, forming, in one surface of the IC device, a plurality of pixels on which a plurality of partial pixels for emitting different color lights has been stacked, and electrically connecting the partial pixels to the driving circuit using connection members.

公开(公告)号：US20200381471A1

公开(公告)日：2020-12-03

申请号：US16860924

申请日：2020-04-28

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghyeon KIM ,  Dae-Myeong GEUM

IPC: H01L27/146 ,  H04N5/378 ,  H04N9/04

Abstract: Provided are a multicolor photodetector and a method of fabricating the same through integration with a readout integrated circuit. The multicolor photodetector may be fabricated by providing an integrated circuit device in which a readout integrated circuit is wired; forming an assembly in which a first photodetection layer for detecting first wavelength light from incident light and a second photodetection layer for detecting second wavelength light from the incident light on the integrated circuit device; and electrically connecting the first photodetection layer and the second photodetection layer to the readout integrated circuit using connecting members.

公开(公告)号：US20220216338A1

公开(公告)日：2022-07-07

申请号：US17522851

申请日：2021-11-09

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghyeon KIM ,  Hyeongrak LIM

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/762

Abstract: Disclosed are a growth structure for a strained channel, and a strained channel using the same and a method of manufacturing a device using the same. The growth structure for a strained channel includes a support substrate, a strain-relaxed buffer (SRB) layer disposed on a support substrate, a base growth layer grown to have one composition on the SRB layer, and a strained channel layer grown to have another composition on the base growth layer. The strained channel layer may include at least one of a tensile-strained channel layer or a compressively strained channel layer.

公开(公告)号：US20220149217A1

公开(公告)日：2022-05-12

申请号：US17454404

申请日：2021-11-10

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon KIM ,  DaeMyeong GEUM ,  SeungYeop AHN ,  Jinha LIM

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L27/144 ,  H01L49/02 ,  H01L31/18

Abstract: Various embodiments relate to a superlattice photodetector and a method of manufacturing the same. The superlattice photodetector includes an absorption layer for absorbing incident light and a waveguide layer coupled with the absorption layer and enabling the incident light to be waveguided within the absorption layer. The waveguide layer may include a periodic structure in which a plurality of metal patterns and a plurality of dielectric patterns are repeatedly arranged. According to various embodiments, the superlattice photodetector can be thinned while having improved performance.

公开(公告)号：US20220357283A1

公开(公告)日：2022-11-10

申请号：US17680469

申请日：2022-02-25

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghyeon KIM ,  Jinha LIM ,  Joonsup SHIM

IPC: G01N21/95 ,  G02B6/122 ,  H01L21/762

Abstract: Various embodiments relate to an optical detection element and GOI (Ge-on-insulator) device for ultra-small on-chip optical sensing, and a manufacturing method of the same. According to various embodiments, the optical detection element and the GOI device may be implemented on a GOI structure comprising a germanium (Ge) layer, and the GOI device may be implemented to have an optical detection element. Specifically, the GOI device may include a GOI structure with a waveguide region comprising a germanium layer, a light source element configured to generate light for the waveguide region, and at least one optical detection element configured to detect light coming from the waveguide region. At least one slot configured to collect light from the light source element may be formed in the germanium layer in the waveguide region. The light source element may generate light so as to be coupled to the germanium layer in the waveguide region. The optical detection element may detect heat generated as light is propagated from the germanium layer.