公开(公告)号：US20140349416A1

公开(公告)日：2014-11-27

申请号：US14458617

申请日：2014-08-13

Applicant: Korea Institute of Science and Technology

Inventor： Gyung-Min CHOI ,  Byoung Chul Min ,  Kyung Ho Shin

IPC: H01L43/12

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/091 ,  G01R33/098 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/14 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/10 ,  Y10T428/115

Abstract: The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

Abstract translation: 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁性隧道结装置包括：i）包含化学式为（A100-xBx）100-yCy的化合物的第一磁性层; ii）沉积在第一磁性层上的绝缘层; 和iii）沉积在绝缘层上并包含化学式为（A100-xBx）100-yCy的化合物的第二磁性层。 第一和第二磁性层具有垂直的磁各向异性，A和B分别为金属元素，C为选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素 （Hf）。