公开(公告)号：US11971315B2

公开(公告)日：2024-04-30

申请号：US17427775

申请日：2019-07-23

申请人： DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： June Seo Kim ,  Myoung Jae Lee ,  Hyeon Jun Lee

IPC分类号： G01L1/12 ,  H01F10/14 ,  H01F10/32

CPC分类号： G01L1/122 ,  H01F10/14 ,  H01F10/325 ,  H01F10/3254

摘要： Disclosed is a force sensor. More particularly, the force sensor includes a first permanent magnet layer; a magnetic tunnel junction disposed on the first permanent magnet layer and configured to have a preset resistance value; and a second permanent magnet layer disposed to be spaced apart from the magnetic tunnel junction, wherein the second permanent magnet layer moves in a direction of the first permanent magnet layer when pressure is applied from outside, the preset resistance value of the magnetic tunnel junction is changed when a magnetic field strength formed between the first permanent magnet layer and the second permanent magnet layer becomes a preset strength or more according to movement of the second permanent magnet layer, and the force sensor senses the pressure based on a change in the preset resistance value.

公开(公告)号：US20180323371A1

公开(公告)日：2018-11-08

申请号：US16022862

申请日：2018-06-29

申请人： Headway Technologies, Inc.

发明人： Huanlong Liu ,  Yuan-Jen Lee ,  Jian Zhu ,  Guenole Jan ,  Luc Thomas ,  Po-Kang Wang ,  Ru-Ying Tong ,  Jodi Mari Iwata

IPC分类号： H01L43/12 ,  H01L43/02 ,  H01F41/14 ,  H01F10/32 ,  H01L43/10 ,  H01L43/08 ,  H01F10/14

CPC分类号： H01L43/12 ,  H01F10/14 ,  H01F10/32 ,  H01F41/14 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.

公开(公告)号：US10020104B2

公开(公告)日：2018-07-10

申请号：US14780188

申请日：2014-03-27

申请人： HITACHI METALS, LTD.

发明人： Mitsuhiro Watanabe ,  Hirohiko Miki ,  Masaki Nakamura

IPC分类号： H01F10/26 ,  H01F1/16 ,  G01C17/28 ,  H01F10/14 ,  H01F1/147 ,  H01F27/36

CPC分类号： H01F10/26 ,  G01C17/28 ,  H01F1/14775 ,  H01F1/16 ,  H01F10/14 ,  H01F10/142 ,  H01F27/365

摘要： Provided is a magnetic sheet including a resin film and a thin sheet-shaped magnetic body adhered to the resin film by an adhesive layer sandwiched between the thin sheet-shaped magnetic body and the resin film. The thin sheet-shaped magnetic body is made from an Fe-based metal magnetic material, has a thickness of 15 μm to 35 μm, and has an AC relative magnetic permeability (μr) in the range of 220 to 770 at a frequency of 500 kHz.

公开(公告)号：US10014465B1

公开(公告)日：2018-07-03

申请号：US15477288

申请日：2017-04-03

申请人： Headway Technologies, Inc.

发明人： Huanlong Liu ,  Yuan-Jen Lee ,  Jian Zhu ,  Guenole Jan ,  Luc Thomas ,  Po-Kang Wang ,  Ru-Ying Tong ,  Jodi Mari Iwata

IPC分类号： H01L43/02 ,  H01L43/12 ,  H01F10/14 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10

CPC分类号： H01L43/12 ,  H01F10/14 ,  H01F10/32 ,  H01F41/14 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer has an interface with a tunnel barrier and a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or CoXFeYNiZLW wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing at about 400° C. thereby promoting BCC structure growth in the oxide layer. As a result, free layer PMA is enhanced and maintained to yield improved thermal stability.

公开(公告)号：US20180026645A1

公开(公告)日：2018-01-25

申请号：US15654278

申请日：2017-07-19

申请人： Georgia Tech Research Corporation

发明人： Chenyun Pan ,  Sourav Dutta ,  Azad Naeemi

IPC分类号： H03K19/20 ,  H01F10/14 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01F10/32 ,  H01F10/16

CPC分类号： H03K19/20 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3218 ,  H01L27/22 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes, and prevents the racing condition.

公开(公告)号：US20170294253A1

公开(公告)日：2017-10-12

申请号：US15480741

申请日：2017-04-06

申请人： Commissariat a l'energie atomique et aux energies alternatives

发明人： Bertrand Delaet ,  Sophie Giroud ,  Rachid Hida

IPC分类号： H01F1/047 ,  G01R33/038 ,  H01F41/02

CPC分类号： H01F1/047 ,  G01R33/0052 ,  G01R33/038 ,  H01F10/002 ,  H01F10/14 ,  H01F10/16 ,  H01F10/30 ,  H01F41/0253

摘要： A permanent magnet includes a stack of N patterns stacked immediately one above the other in a stacking direction, each pattern including an antiferromagnetic layer made of antiferromagnetic material, a ferromagnetic layer made of ferromagnetic material, the directions of magnetization of the various ferromagnetic layers of all the patterns all being identical to one another. At least one ferromagnetic layer includes a first sub-layer made of CoFeB whose thickness is greater than 0.05 nm, and a second sub-layer made of a ferromagnetic material different from CoFeB and whose thickness is greater than the thickness of the first sub-layer.

公开(公告)号：US20170278614A1

公开(公告)日：2017-09-28

申请号：US15506985

申请日：2015-08-06

申请人： Würth Elektronik Eisos GmbH & Co. KG

发明人： Alexander GERFER ,  Dragan DINULOVIC

IPC分类号： H01F10/12 ,  H01F10/14 ,  H01F10/13 ,  H01F3/10 ,  H01F27/26

CPC分类号： H01F10/12 ,  H01F3/10 ,  H01F10/131 ,  H01F10/132 ,  H01F10/14 ,  H01F17/0033 ,  H01F17/06 ,  H01F27/263 ,  H01F41/046 ,  H01F2003/106

摘要： A magnetic core for an inductive component is produced by thin-film technology, wherein the magnetic core consists of at least two different magnetic materials.

公开(公告)号：US20170170393A1

公开(公告)日：2017-06-15

申请号：US15438420

申请日：2017-02-21

申请人： Applied Materials, Inc.

发明人： Lin XUE ,  Jaesoo AHN ,  Mahendra PAKALA ,  Chi Hong CHING ,  Rongjun WANG

IPC分类号： H01L43/12 ,  H01F10/32 ,  H01F10/14 ,  H01L43/08 ,  H01L43/10

CPC分类号： H01L43/12 ,  H01F10/14 ,  H01F10/3222 ,  H01L43/08 ,  H01L43/10

摘要： Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for spin-transfer-torque magnetoresistive random access memory (STT-MRAM) applications. In one example, a film stack utilized to form a magnetic tunnel junction structure on a substrate includes a pinned layer disposed on a substrate, wherein the pinned layer comprises multiple layers including at least one or more of a Co containing layer, Pt containing layer, Ta containing layer, an Ru containing layer, an optional structure decoupling layer disposed on the pinned magnetic layer, a magnetic reference layer disposed on the optional structure decoupling layer, a tunneling barrier layer disposed on the magnetic reference layer, a magnetic storage layer disposed on the tunneling barrier layer, and a capping layer disposed on the magnetic storage layer.

公开(公告)号：US20160372658A1

公开(公告)日：2016-12-22

申请号：US15254107

申请日：2016-09-01

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Guohan Hu ,  Daniel C. Worledge

IPC分类号： H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01F41/32

CPC分类号： H01L43/10 ,  G11C11/161 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).

公开(公告)号：US09384879B2

公开(公告)日：2016-07-05

申请号：US14155552

申请日：2014-01-15

申请人： International Business Machines Corporation

发明人： Philipp Herget ,  Eugene J. O'Sullivan ,  Lubomyr T. Romankiw ,  Naigang Wang ,  Bucknell C. Webb

IPC分类号： H01L29/82 ,  H01F7/02 ,  H01L27/06 ,  H01L49/02

CPC分类号： H01L27/22 ,  G11B5/3163 ,  H01F1/14708 ,  H01F7/021 ,  H01F10/14 ,  H01F27/24 ,  H01F27/2804 ,  H01F2027/2809 ,  H01L27/0641 ,  H01L27/224 ,  H01L28/10 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

摘要翻译： 提供了一种用于集成层压磁性装置的机构。 基板和多层堆叠结构形成该装置。 多层堆叠结构包括在基板上形成的交替磁层和二极管结构。 多层堆叠结构中的每个磁性层通过二极管结构与多层堆叠结构中的另一磁性层分离。