公开(公告)号：US20250075289A1

公开(公告)日：2025-03-06

申请号：US18805621

申请日：2024-08-15

Applicant: Kunming University of Science and Technology

Inventor： Lingxin KONG ,  Jian PANG ,  Bin YANG ,  Baoqiang XU ,  Wenlong JIANG ,  Junjie XU ,  Dachun LIU ,  Yang TIAN ,  Yong DENG

IPC: C22B58/00 ,  B01D3/10 ,  B01D3/42 ,  B01D5/00 ,  C22B9/02

Abstract: Provided is a method for preparing high-purity indium (In). The method for preparing the high-purity In includes: distilling refined In to obtain an In vapor-containing gas; and condensing the In vapor-containing gas to obtain the high-purity In; where the distilling is conducted at a temperature of 1,000° C. to 1,100° C. under a vacuum degree of 1.0×10−3 Pa to 5.0×10−2 Pa; and the condensing is conducted at a temperature of 700° C. to 900° C. under a vacuum degree of 1.0×10−3 Pa to 5.0×10−2 Pa. The In vapor-containing gas is obtained by controlling the temperature and vacuum degree of the distilling to evaporate In and impurities with a vapor pressure higher than the In. The temperature and vacuum degree of the condensing are adjusted to condense the In in the In vapor-containing gas.